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UN4116 PDF预览

UN4116

更新时间: 2024-01-09 15:32:04
品牌 Logo 应用领域
松下 - PANASONIC 晶体小信号双极晶体管开关
页数 文件大小 规格书
15页 381K
描述
Silicon PNP epitaxial planar type

UN4116 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:IN-LINE, R-PSIP-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.84
Is Samacsys:N其他特性:BUILT IN BIAS RESISTOR
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:50 V
配置:SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):290
JESD-30 代码:R-PSIP-T3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
最大功率耗散 (Abs):0.3 W认证状态:Not Qualified
子类别:BIP General Purpose Small Signal表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):80 MHz
Base Number Matches:1

UN4116 数据手册

 浏览型号UN4116的Datasheet PDF文件第2页浏览型号UN4116的Datasheet PDF文件第3页浏览型号UN4116的Datasheet PDF文件第4页浏览型号UN4116的Datasheet PDF文件第5页浏览型号UN4116的Datasheet PDF文件第6页浏览型号UN4116的Datasheet PDF文件第7页 
Transistors with built-in Resistor  
UNR411x Series (UN411x Series)  
Silicon PNP epitaxial planar type  
Unit: mm  
4.0 0.2  
2.0 0.2  
For digital circuits  
0.75 max.  
Features  
Costs can be reduced through downsizing of the equipment and  
reduction of the number of parts  
New S type package, allowing supply with the radial taping  
Resistance by Part Number  
(R1)  
(R2)  
+0.20  
0.45  
–0.10  
UNR4110 (UN4110)  
UNR4111 (UN4111)  
UNR4112 (UN4112)  
UNR4113 (UN4113)  
UNR4114 (UN4114)  
UNR4115 (UN4115)  
UNR4116 (UN4116)  
UNR4117 (UN4117)  
UNR4118 (UN4118)  
UNR4119 (UN4119)  
UNR411D (UN411D)  
UNR411E (UN411E)  
UNR411F (UN411F)  
UNR411H (UN411H)  
UNR411L (UN411L)  
UNR411M  
47 kΩ  
10 kΩ  
22 kΩ  
47 kΩ  
10 kΩ  
10 kΩ  
4.7 kΩ  
22 kΩ  
0.51 kΩ  
1 kΩ  
47 kΩ  
47 kΩ  
4.7 kΩ  
2.2 kΩ  
4.7 kΩ  
2.2 kΩ  
4.7 kΩ  
+0.20  
0.45  
–0.10  
(2.5) (2.5)  
10 kΩ  
22 kΩ  
47 kΩ  
47 kΩ  
0.7 0.1  
1: Emitter  
2: Collector  
3: Base  
1
2
3
NS-B1 Package  
Internal Connection  
5.1 kΩ  
10 kΩ  
10 kΩ  
22 kΩ  
10 kΩ  
10 kΩ  
4.7 kΩ  
47 kΩ  
47 kΩ  
R1  
B
C
E
R2  
UNR411N  
Absolute Maximum Ratings Ta = 25°C  
Parameter  
Symbol  
Rating  
Unit  
V
Collector-base voltage (Emitter open) VCBO  
Collector-emitter voltage (Base open) VCEO  
50  
50  
V
Collector current  
IC  
PT  
100  
mA  
mW  
°C  
300  
Total power dissipation  
Junction temperature  
Storage temperature  
Tj  
150  
Tstg  
55 to +150  
°C  
Note) The part numbers in the parenthesis show conventional part number.  
Publication date: December 2003  
SJH00018DED  
1

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UN4117R ETC

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UN4118Q PANASONIC

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Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, NS-B1,
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Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, NS-B1,