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UN411ES

更新时间: 2024-01-19 04:14:19
品牌 Logo 应用领域
松下 - PANASONIC /
页数 文件大小 规格书
15页 381K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, NS-B1, 3 PIN

UN411ES 技术参数

生命周期:Obsolete包装说明:IN-LINE, R-PSIP-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.84Is Samacsys:N
其他特性:BUILT-IN BIAS RESISTOR RATIO IS 1最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):290JESD-30 代码:R-PSIP-T3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE极性/信道类型:PNP
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):80 MHzBase Number Matches:1

UN411ES 数据手册

 浏览型号UN411ES的Datasheet PDF文件第2页浏览型号UN411ES的Datasheet PDF文件第3页浏览型号UN411ES的Datasheet PDF文件第4页浏览型号UN411ES的Datasheet PDF文件第5页浏览型号UN411ES的Datasheet PDF文件第6页浏览型号UN411ES的Datasheet PDF文件第7页 
Transistors with built-in Resistor  
UNR411x Series (UN411x Series)  
Silicon PNP epitaxial planar type  
Unit: mm  
4.0 0.2  
2.0 0.2  
For digital circuits  
0.75 max.  
Features  
Costs can be reduced through downsizing of the equipment and  
reduction of the number of parts  
New S type package, allowing supply with the radial taping  
Resistance by Part Number  
(R1)  
(R2)  
+0.20  
0.45  
–0.10  
UNR4110 (UN4110)  
UNR4111 (UN4111)  
UNR4112 (UN4112)  
UNR4113 (UN4113)  
UNR4114 (UN4114)  
UNR4115 (UN4115)  
UNR4116 (UN4116)  
UNR4117 (UN4117)  
UNR4118 (UN4118)  
UNR4119 (UN4119)  
UNR411D (UN411D)  
UNR411E (UN411E)  
UNR411F (UN411F)  
UNR411H (UN411H)  
UNR411L (UN411L)  
UNR411M  
47 kΩ  
10 kΩ  
22 kΩ  
47 kΩ  
10 kΩ  
10 kΩ  
4.7 kΩ  
22 kΩ  
0.51 kΩ  
1 kΩ  
47 kΩ  
47 kΩ  
4.7 kΩ  
2.2 kΩ  
4.7 kΩ  
2.2 kΩ  
4.7 kΩ  
+0.20  
0.45  
–0.10  
(2.5) (2.5)  
10 kΩ  
22 kΩ  
47 kΩ  
47 kΩ  
0.7 0.1  
1: Emitter  
2: Collector  
3: Base  
1
2
3
NS-B1 Package  
Internal Connection  
5.1 kΩ  
10 kΩ  
10 kΩ  
22 kΩ  
10 kΩ  
10 kΩ  
4.7 kΩ  
47 kΩ  
47 kΩ  
R1  
B
C
E
R2  
UNR411N  
Absolute Maximum Ratings Ta = 25°C  
Parameter  
Symbol  
Rating  
Unit  
V
Collector-base voltage (Emitter open) VCBO  
Collector-emitter voltage (Base open) VCEO  
50  
50  
V
Collector current  
IC  
PT  
100  
mA  
mW  
°C  
300  
Total power dissipation  
Junction temperature  
Storage temperature  
Tj  
150  
Tstg  
55 to +150  
°C  
Note) The part numbers in the parenthesis show conventional part number.  
Publication date: December 2003  
SJH00018DED  
1

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