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UN4210R PDF预览

UN4210R

更新时间: 2024-01-11 05:53:56
品牌 Logo 应用领域
松下 - PANASONIC 开关晶体管
页数 文件大小 规格书
14页 486K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, NS-B1, 3 PIN

UN4210R 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:IN-LINE, R-PSIP-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.84
其他特性:BUILT IN BIAS RESISTOR最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):210JESD-30 代码:R-PSIP-T3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):0.3 W
认证状态:Not Qualified子类别:BIP General Purpose Small Signal
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):150 MHzBase Number Matches:1

UN4210R 数据手册

 浏览型号UN4210R的Datasheet PDF文件第2页浏览型号UN4210R的Datasheet PDF文件第3页浏览型号UN4210R的Datasheet PDF文件第4页浏览型号UN4210R的Datasheet PDF文件第5页浏览型号UN4210R的Datasheet PDF文件第6页浏览型号UN4210R的Datasheet PDF文件第7页 
This product complies with the RoHS Directive (EU 2002/95/EC).  
Transistors with built-in Resistor  
UNR421x Series (UN421x Series)  
Silicon NPN epitaxial planar type  
Unit: mm  
4.0 0.2  
2.0 0.2  
For digital circuits  
Features  
0.75 max.  
Costs can be reduced through downsizing of the equipment and  
reduction of the number of parts  
New S type package, allowing supply with the radial taping  
Resistance by Part Number  
(R1)  
47 kΩ  
10 kΩ  
22 kΩ  
4kΩ  
10 kΩ  
10 kΩ  
4.7 kΩ  
22 kΩ  
0.51 kΩ  
1 kΩ  
4
4.
10 kΩ  
4.kΩ  
(R2)  
+0.20  
05  
UNR4210 (UN4210)  
UNR4211 (UN4211)  
UNR4212 (UN4212)  
UNR4213 (UN4213)  
UNR4214 (UN4214)  
UNR4215 (UN4215)  
UNR4216 (UN426
UNR4217 (UN4217)  
UNR4218 (UN428)  
UNR4219 N4219)  
UNR421(UN421D)  
UNR421E (UN421E)  
UNR42(UN421F)  
UNR(UN421K)  
UNRL (UN421L)  
.
+0.20  
0.45  
–0.10  
(2.5) (2.5)  
Ω  
2 kΩ  
47 kΩ  
47 kΩ  
0.7 0.1  
1: Emitter  
2: Collector  
3: Base  
1
2
3
NS-B1 Package  
Internal Connection  
51 kΩ  
10 kΩ  
10 kΩ  
22 kΩ  
10 kΩ  
4.7 kΩ  
4.7 kΩ  
R1  
B
C
E
R2  
Absolute Maximum Ratings Ta = 5°C  
ametr  
Symbol  
Rating  
Unit  
V
Coge (Emitter open) VCBO  
Collecoltage (Base open) VCEO  
50  
50  
V
Collector cnt  
IC  
PT  
100  
mA  
mW  
°C  
300  
Total power dissipation  
Junction temperature  
Storage temperature  
Tj  
150  
Tstg  
55 to +150  
°C  
Note) The part numbers in the parenthesis show conventional part number.  
Publication date: December 2003  
SJH00020BED  
1

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