Datasheet > UMW10N

UMW10N

更新时间： 2024-11-04 22:17:27

品牌	Logo	应用领域
罗姆 - ROHM		晶体晶体管
页数	文件大小	规格书
2页	69K
描述
High transition frequency (dual transistors)

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中文翻译

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数据手册

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UMW10N 数据手册

EMX4 / UMW6N / UMW10N / UMX4N /

FMW6 / FMW10 / IMX4

Transistors

High transition frequency (dual transistors)

EMX4 / UMW6N / UMW10N / UMX4N /

FMW6 / FMW10 / IMX4

!Features

1) Two 2SC3837K chips in a EMT or UMT or SMT package.

2) High transition frequency. (f^T=1.5GHz)

3) Low output capacitance. (Cob=0.95pF)

!Equivalent circuit

EMX4 / UMX4N

IMX4

UMW6N

FMW6

UMW10

FMW10

(3) (2)

(1)

(4) (5)

(6)

(3) (2)

(1)

(3) (4)

(5)

(3)

(2)

(1)

(3)

(4)

(5)

(1)

(5)

(1)

(4)

(5)

(6)

(3)

(2)

(1)

(4)

(2)

(4)

(2)

!Absolute maximum ratings (Ta = 25°C)

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Symbol

Limits

Unit

VCBO

VCEO

VEBO

Collector current

EMX4 / UMW6N / UMW10N / UMX4N

Collector power

150(TOTAL)

300(TOTAL)

150

∗1

∗2

dissipation

FMW6 / FMW10 / IMX4

Junction temperature

Storage temperature

°C

Tstg

−55~

+150

∗1 120mW per element must not be exceeded.

∗2 200mW per element must not be exceeded.

!Electrical characteristics (Ta = 25°C)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Symbol

Min.

Typ.

−

Max.

−

Conditions

Unit

BV^CBO

BVCEO

BVEBO

=10µA

C=1mA

−

=10µA

CB=10V

EB=2V

CBO

EBO

CE(sat)

FE1 / FE2

−

0.5

270

0.5

µA

−

Emitter cutoff current

DC current transfer ratio

−

0.5

600

−

CE/I

=10V/10mA

=20mA/4mA

C/I

Collector-emitter saturation voltage

−

CE/I

=10V/10mA

=10V/10mA, f=200MHz

=0A

hFE pairing

Transition frequency

1500

0.95

−

1.6

∗

MHz

CE/I

Output capacitance

Cob

CB/f=10V/1MHz, I

∗Transition frequency of the device.

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