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UMW10N PDF预览

UMW10N

更新时间: 2024-11-27 22:17:27
品牌 Logo 应用领域
罗姆 - ROHM 晶体晶体管
页数 文件大小 规格书
2页 69K
描述
High transition frequency (dual transistors)

UMW10N 数据手册

 浏览型号UMW10N的Datasheet PDF文件第2页 
EMX4 / UMW6N / UMW10N / UMX4N /  
FMW6 / FMW10 / IMX4  
Transistors  
High transition frequency (dual transistors)  
EMX4 / UMW6N / UMW10N / UMX4N /  
FMW6 / FMW10 / IMX4  
!Features  
1) Two 2SC3837K chips in a EMT or UMT or SMT package.  
2) High transition frequency. (fT=1.5GHz)  
3) Low output capacitance. (Cob=0.95pF)  
!Equivalent circuit  
EMX4 / UMX4N  
IMX4  
UMW6N  
FMW6  
UMW10  
FMW10  
(3) (2)  
(1)  
(4) (5)  
(6)  
(3) (2)  
(1)  
(3) (4)  
(5)  
(3)  
(2)  
(1)  
(3)  
(4)  
(5)  
(5)  
(1)  
(5)  
(1)  
(4)  
(5)  
(6)  
(3)  
(2)  
(1)  
(4)  
(2)  
(4)  
(2)  
!Absolute maximum ratings (Ta = 25°C)  
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Symbol  
Limits  
Unit  
V
VCBO  
VCEO  
VEBO  
30  
18  
V
3
V
Collector current  
I
C
50  
mA  
EMX4 / UMW6N / UMW10N / UMX4N  
Collector power  
150(TOTAL)  
300(TOTAL)  
150  
1  
2  
Pc  
mW  
dissipation  
FMW6 / FMW10 / IMX4  
Junction temperature  
Storage temperature  
Tj  
°C  
°C  
Tstg  
55~  
+150  
1 120mW per element must not be exceeded.  
2 200mW per element must not be exceeded.  
!Electrical characteristics (Ta = 25°C)  
Parameter  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cutoff current  
Symbol  
Min.  
Typ.  
Max.  
Conditions  
Unit  
V
BVCBO  
BVCEO  
BVEBO  
30  
18  
3
I
I
I
C
=10µA  
V
C=1mA  
V
E
=10µA  
CB=10V  
EB=2V  
I
CBO  
EBO  
FE  
CE(sat)  
FE1 / FE2  
0.5  
0.5  
270  
0.5  
2
µA  
µA  
V
V
V
Emitter cutoff current  
I
DC current transfer ratio  
27  
0.5  
600  
h
CE/I  
C
=10V/10mA  
=20mA/4mA  
V
I
C/I  
B
Collector-emitter saturation voltage  
V
h
h
1
V
CE/I  
C
=10V/10mA  
=10V/10mA, f=200MHz  
=0A  
hFE pairing  
Transition frequency  
f
T
1500  
0.95  
1.6  
MHz  
pF  
V
V
CE/I  
C
Output capacitance  
Cob  
CB/f=10V/1MHz, I  
E
Transition frequency of the device.  

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