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UMS2NTR PDF预览

UMS2NTR

更新时间: 2024-09-29 16:37:03
品牌 Logo 应用领域
罗姆 - ROHM 放大器光电二极管晶体管
页数 文件大小 规格书
2页 34K
描述
Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, SC-88A, 5 PIN

UMS2NTR 技术参数

生命周期:Obsolete零件包装代码:SC-88A
包装说明:SMALL OUTLINE, R-PDSO-G5针数:5
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.79
最大集电极电流 (IC):0.15 A集电极-发射极最大电压:50 V
配置:COMMON BASE, 2 ELEMENTS最小直流电流增益 (hFE):120
JESD-30 代码:R-PDSO-G5元件数量:2
端子数量:5最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:PNP
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):140 MHzVCEsat-Max:0.5 V
Base Number Matches:1

UMS2NTR 数据手册

 浏览型号UMS2NTR的Datasheet PDF文件第2页 
EMS2 / EMT2 / EMT3 / UMS2N / UMT2N /  
FMS2A / IMT2A / IMT3A  
Transistors  
General purpose (dual transistors)  
EMS2 / EMT2 / EMT3 / UMS2N / UMT2N / FMS2A /  
IMT2A / IMT3A  
zFeatures  
1) Two 2SA1037AK chips in a EMT or UMT or SMT package.  
zCircuit schematic  
EMT2 / UMT2N  
IMT2A  
EMT3  
IMT3A  
EMS2 / UMS2N  
FMS2A  
(3)  
(2)  
(1)  
(4)  
(5)  
(6)  
(3)  
(2)  
(1)  
(4)  
(5)  
(6)  
(3)  
(2)  
(1)  
(3)  
(4)  
(5)  
(1)  
(4)  
(5)  
(2)  
(4)  
(5)  
(6)  
(3)  
(2)  
(1)  
(4) (5)  
(6)  
(3) (2)  
(1)  
zAbsolute maximum ratings (Ta = 25°C)  
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Symbol  
Limits  
60  
50  
6  
Unit  
V
VCBO  
VCEO  
VEBO  
V
V
Collector current  
I
C
150  
mA  
1
EMS2 / EMT2 / EMT3 / UMS2N / UMT2N  
FMS2A / IMT2A / IMT3A  
150(TOTAL)  
300(TOTAL)  
150  
Collector power  
dissipation  
P
C
mW  
2
Junction temperature  
Storage temperature  
Tj  
°C  
°C  
Tstg  
55~+150  
1 120mW per element must not be exceeded.  
2 200mW per element must not be exceeded.  
zElectrical characteristics (Ta = 25°C)  
Parameter  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cutoff current  
Symbol  
Min.  
Typ.  
Max.  
Conditions  
Unit  
V
BVCBO  
BVCEO  
BVEBO  
60  
50  
6  
I
C
=−50µA  
V
I
I
C=−1mA  
V
E
=−50µA  
CB=−60V  
EB=−6V  
I
CBO  
EBO  
CE(sat)  
FE  
0.1  
0.1  
0.5  
560  
µA  
µA  
V
V
V
Emitter cutoff current  
I
Collector-emitter saturation voltage  
DC current transfer ratio  
V
I
C/I  
B
=−50mA/5mA  
h
120  
V
V
V
CE=−6V, IC  
=−1mA  
Transition frequency  
f
T
140  
4
MHz  
pF  
CE=−12V, I  
CE=−12V, I  
E
E
=2mA, f=100MHz  
=0A, f=1MHz  
Output capacitance  
Cob  
5
Transition frequency of the device.  
zPackage, marking, and packaging specifications  
Type  
Package  
EMS2  
EMT5  
S2  
EMT2  
EMT6  
T2  
EMT3  
EMT6  
T3  
UMS2N  
UMT5  
S2  
UMT2N  
FMS2A  
SMT5  
S2  
IMT2A  
SMT6  
T2  
IMT3A  
SMT6  
T3  
UMT6  
T2  
Marking  
Code  
T2R  
T2R  
T2R  
TR  
TR  
T148  
3000  
T108  
3000  
T108  
3000  
Basic ordering unit (pieces)  
8000  
8000  
8000  
3000  
3000  

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