UMD9N

更新时间： 2024-09-25 22:17:27

品牌	Logo	应用领域
罗姆 - ROHM		晶体数字晶体管驱动
页数	文件大小	规格书
4页	85K
描述
Digital Transistor (Dual Digital Transistors for Inverter Drive)

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中文翻译

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数据手册

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UMD9N 数据手册

EMD9 / UMD9N / IMD9A

Transistors

Digital Transistor

(Dual Digital Transistors for Inverter Drive)

EMD9 / UMD9N / IMD9A

zExternal dimensions (Unit : mm)

zFeatures

1) DTA114Y and DTC114Y transistors are built-in a EMT

or UMT or SMT package.

EMD9

( )

1.2

1.6

zEquivalent circuit

EMD9 / UMD9N

(3) (2) (1)

IMD9A

(4) (5) (6)

Each lead has same dimensions

ROHM : EMT6

UMD9N

DTr1

Abbreviated symbol : D9

DTr2

=10k

Ω

=10k

¹=47k

Ω

¹=47k

(4) (5) (6)

(3) (2) (1)

1.25

2.1

zPackage, marking, and packaging specifications

Type

EMD9

EMT6

UMD9N

UMT6

IMD9A

SMT6

0.1Min.

Package

Each lead has same dimensions

Marking

Code

Basic ordering unit (pieces)

T2R

T108

3000

ROHM : UMT6

EIAJ : SC-88

8000

3000

Abbreviated symbol : D9

IMD9A

zAbsolute maximum ratings (Ta=25°C)

Parameter

Symbol

Limits

Unit

Supply voltage

−6 to +40

Input voltage

°C

Output current

Collector current

1.6

2.8

C (Max.)

100

∗

EMD9, UMD9N

IMD9A

150(TOTAL)

300(TOTAL)

Power dissipation

Junction temperature

Storage temperature

150

0.3to0.6

Tstg

−55 to +150

°C

Each lead has same dimensions

120mW per element must not be exceeded. PNP type negative symbols have been omitted.

200mW per element must not be exceeded. PNP type negative symbols have been omitted.

∗

ROHM : SMT6

EIAJ : SC-74

Abbreviated symbol : D9

zElectrical characteristics (Ta=25°C)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

I(off)

I(on)

−

1.4

−

0.1

−

250

0.3

−

0.3

0.88

0.5

−

CC=5V , I

O=100mA

=0.3V , I =1mA

Input voltage

Output voltage

O(on)

−

=5mA , I

=5V

CC=50V , V

=5mA , V =5V

CE=10V , I

=0.25mA

Input current

Output current

O(off)

I=0V

−

DC current gain

Transition frequency

Input resistance

∗

−

MHz

= −5mA , f=100MHz

−

Resistance ratio

R2/R1

3.7

4.7

5.7

−

PNP type negative symbols have been omitted.

Characteristics of built-in transistor.

∗

Rev.A

1/3

12 3 4

中文翻译

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