UMB6NTN

更新时间： 2024-01-10 15:48:57

品牌	Logo	应用领域
罗姆 - ROHM		晶体小信号双极晶体管数字晶体管
页数	文件大小	规格书
1页	55K
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UMB6NTN 数据手册

EMB6 / UMB6N

Transistors

General purpose (dual digital transistors)

EMB6 / UMB6N

!External dimensions (Units : mm)

!Feature

1) Two DTA144E chips in a EMT or UMT package.

EMB6

( )

1.2

1.6

!Equivalent circuit

EMB6 / UMB6N

(3)

(2)

(1)

Each lead has same dimensions

ROHM : EMT6

UMB6N

(4) (5)

(6)

!Package, marking, and packaging specifications

1.25

2.1

Type

EMB6

EMT6

UMB6N

UMT6

Package

Marking

0.1Min.

Code

T2R

Basic ordering unit (pieces)

8000

3000

Each lead has same dimensions

ROHM : UMT6

EIAJ : SC-88

!Absolute maximum ratings (Ta=25°C)

Parameter

Symbol

Limits

Unit

Supply voltage

VCC

−50

−40

Input voltage

°C

Output current

Power dissipation

Junction temperature

150(TOTAL)

150

∗1

Storage temperature

Tstg

−55~

+150

°C

∗1 120mW per element must not be exceeded.

!Electrical characteristics (Ta=25°C)

Parameter

Symbol

Min.

Typ.

−

Max.

−0.5

−

Conditions

Unit

I (off)

−

−3.0

−

CC=−5V, I

=−0.3V, I

=−10mA, I

=−5V

CC=−50V, V

=−5mA, V =−5V

=−100µA

Input voltage

VI (on)

=−2mA

Output voltage

Input current

VO (on)

−0.1

−

−0.3

−0.18

−0.5

−

61.1

1.2

µA

−

kΩ

−

=−0.5mA

Output current

DC current gain

Input resistance

Resistance ratio

O (off)

=0V

32.9

0.8

−

1.0

250

−

/ R1

Transition frequency

−

MHz

CE=−10V, I

=5mA, f=100MHz

∗

∗Transition frequency of the device.

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