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UK3019G-AE2-R PDF预览

UK3019G-AE2-R

更新时间: 2024-11-21 07:09:11
品牌 Logo 应用领域
友顺 - UTC 晶体小信号场效应晶体管开关光电二极管驱动
页数 文件大小 规格书
3页 128K
描述
2.5V DRIVE SILICON N-CHANNEL MOSFET

UK3019G-AE2-R 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:SOT-23包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.72
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (ID):0.1 A最大漏源导通电阻:8 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-236
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

UK3019G-AE2-R 数据手册

 浏览型号UK3019G-AE2-R的Datasheet PDF文件第2页浏览型号UK3019G-AE2-R的Datasheet PDF文件第3页 
UNISONIC TECHNOLOGIES CO., LTD  
UK3019  
Preliminary  
Power MOSFET  
2.5V DRIVE SILICON  
N-CHANNEL MOSFET  
„
DESCRIPTION  
3
The UTC UK3019 is a silicon N-channel MOSFET which has  
been designed to minimize on-state resistance while it provides  
rugged, reliable and fast switching performance. The product is  
particularly suited for low voltage, low current applications such  
as small servo motor controller, power MOSFET gate drivers, and  
other switching applications.  
1
2
SOT-23-3  
(JEDEC TO-236)  
„
FEATURES  
* Min VDSS =30V  
* RDS(ON) =5(VGS=4V)  
* RDS(ON) =7(VGS=2.5V)  
* Pulsed ID=400mA  
* Low Voltage Drive (2.5V)  
„
SYMBOL  
„
ORDERING INFORMATION  
Pin Assignment  
Ordering Number  
UK3019G-AE2-R  
Package  
Packing  
1
2
3
SOT-23-3  
S
G
D
Tape Reel  
„
MARKING  
www.unisonic.com.tw  
Copyright © 2010 Unisonic Technologies Co., LTD  
1 of 3  
QW-R502-311.b  

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