Datasheet > UHBS30-1_07

UHBS30-1_07

更新时间： 2025-08-19 08:24:43

品牌	Logo	应用领域
ASI		晶体晶体管射频
页数	文件大小	规格书
1页	19K
描述
NPN SILICON RF POWER TRANSISTOR

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UHBS30-1_07 数据手册

UHBS30-1

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:

The ASI UHBS30-1 is Designed for

Class C, FM Base Applications up to

900 MHz.

PACKAGE STYLE .230 6L FLG

.040x45°

FEATURES:

2XØ.130

4X .025 R

.115

• Internal Input Matching Network

• P_G= 7.5 dB at 30 W/900 MHz

• Omnigold™ Metalization System

.430

.125

MAXIMUM RATINGS

9.0 A

50 V

I_C

MINIMUM

inches / mm

MAXIMUM

DIM

inches / mm

V_CBO

V_CEO

V_EBO

P_DISS

T_J

.355 / 9.02

.115 / 2.92

.075 / 1.91

.225 / 5.72

.090 / 2.29

.720 / 18.29

.970 / 24.64

.355 / 9.02

.004 / 0.10

.120 / 3.05

.160 / 4.06

.230 / 5.84

.365 / 9.27

.125 / 3.18

.085 / 2.16

.235 / 5.97

.110 / 2.79

.730 / 18.54

.980 / 24.89

.365 / 9.27

.006 / 0.15

.130 / 3.30

.180 / 4.57

.260 / 6.60

30 V

4.0 V

100 W @ T_C= 25 °C

-65 °C to +200 °C

-65 °C to +150 °C

1.5°C/W

T_STG

θ_JC

ORDER CODE: ASI10670

CHARACTERISTICS ^T_C= 25 °C

SYMBOL

BV_CEO

NONETEST CONDITIONS

MINIMUM TYPICAL MAXIMUM UNITS

I_C= 50 mA

I_E= 10 mA

BV_CES

BV_EBO

I_CBO

R_BE= 10 Ω

4.0

_CE= 15 V

_CE= 24 V

_CE= 5.0 V

---

I_CES

I_C= 1.0 A

h_FE

V_CB= 25 V

V_CE= 24 V

f = 1.0 MHz

f = 900 GHz

C_ob

7.5

P_G

P_OUT= 30 W

η_C

A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. B

1/1

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

Specifications are subject to change without notice.

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