Datasheet > UG2G-E3-54

UG2G-E3-54

更新时间： 2024-01-07 03:16:19

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	73K
描述
Ultrafast Plastic Rectifier

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UG2G-E3-54 数据手册

New Product

UG2F, UG2G

Vishay General Semiconductor

Ultrafast Plastic Rectifier

FEATURES

• Glass passivated chip junction

• Ultrafast reverse recovery time

• Low switching losses, high efficiency

• High forward surge capability

• Solder dip 275 °C max. 10 s, per JESD 22-B106

• Compliant to RoHS directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

DO-204AC (DO-15)

TYPICAL APPLICATIONS

For use in high frequency rectification and freewheeling

application in switching mode converters and inverters for

consumer, computer and telecommunication.

PRIMARY CHARACTERISTICS

I_F(AV)

2.0 A

V_RRM

I_FSM

300 V, 400 V

50 A

MECHANICAL DATA

Case: DO-204AC (DO-15)

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS compliant, commercial grade

t_rr

35 ns

V_Fat I_F= 2.0 A

T_Jmax.

0.910 V

150 °C

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test

Polarity: Color band denotes cathode end

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

UG2F

UG2G

UNIT

Maximum repetitive peak reverse voltage

V_RRM

300

400

Maximum average forward rectified current

at 0.375" (9.5 mm) lead length (fig. 1)

I_F(AV)

2.0

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load

I_FSM

Operating junction and storage temperature range

T_J, T_STG

- 55 to + 150

°C

ELECTRICAL CHARACTERISTICS (T_A= 25 °C unless otherwise noted)

PARAMETER

TEST CONDITIONS

SYMBOL

TYP.

0.921

1.016

0.772

0.910

1.8

MAX.

UNIT

I_F= 1.0 A

T_J= 25 °C

I_F= 2.0 A

I_F= 1.0 A

I_F= 2.0 A

1.10

(1)

Instantaneous forward voltage

V_F

T_J= 125 °C

1.02

T_J= 25 °C

(2)

Maximum reverse current

Rated V_R

I_R

μA

T_J= 100 °C

108

200

I_F= 0.5 A, I_R= 1.0 A,

_rr= 0.25 A

Maximum reverse recovery time

t_rr

Typical reverse recovery time

Typical reverse recovery current

Typical stored charge

t_rr

1.7

I_F= 1.0 A, dI/dt = 100 A/μs,

V_R= 30 V, I_rr= 0.1 I_RM

I_RM

Q_rr

C_J

Typical junction capacitance

4.0 V, 1 MHz

Notes

(1)

(2)

Pulse test: 300 μs pulse width, 1 % duty cycle

Pulse test: Pulse width ≤ 40 ms

Document Number: 88995

Revision: 23-Oct-09

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

www.vishay.com

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