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UFT12010D PDF预览

UFT12010D

更新时间: 2024-02-25 14:33:37
品牌 Logo 应用领域
美高森美 - MICROSEMI 整流二极管局域网超快恢复二极管快速恢复二极管
页数 文件大小 规格书
4页 213K
描述
Ultrafast Recovery Modules

UFT12010D 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:R-XSFM-T6Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.92Is Samacsys:N
应用:ULTRA FAST RECOVERY配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:R-XSFM-T6JESD-609代码:e0
最大非重复峰值正向电流:1000 A元件数量:2
相数:1端子数量:6
最高工作温度:175 °C最低工作温度:-55 °C
最大输出电流:60 A封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
认证状态:Not Qualified最大重复峰值反向电压:100 V
最大反向恢复时间:0.06 µs表面贴装:NO
端子面层:TIN LEAD端子形式:THROUGH-HOLE
端子位置:SINGLEBase Number Matches:1

UFT12010D 数据手册

 浏览型号UFT12010D的Datasheet PDF文件第2页浏览型号UFT12010D的Datasheet PDF文件第3页浏览型号UFT12010D的Datasheet PDF文件第4页 
Ultrafast Recovery Modules  
UFT120, 121 & 122  
A
N 4 Places  
Dim. Inches  
Millimeters  
Min.  
Max. Notes  
Max. Min.  
1 2 3  
Common Cathode  
E
C
A 1.995  
B ---  
C 0.495  
D ---  
E 0.990  
F 2.390  
2.005  
---  
0.506  
---  
1.010  
2.410  
50.67  
---  
12.57  
50.93  
---  
12.83  
---  
25.65  
61.21  
---  
Dia.  
25.15  
60.71  
1 2 3  
A=Common Anode  
1.200  
K
G
37.85  
38.35  
3.30  
10.16  
1.490  
1.510  
0.130  
0.400  
H 0.120  
---  
J
3.05  
---  
F
G
K 0.240  
0.260  
0.510  
0.050  
0.195  
0.052  
6.10  
12.45  
6.60  
12.95  
to Lead C  
L
1 2 3  
D=Doubler  
0.490  
L
H
1
2
3
M 0.040  
N 0.175  
P 0.032  
1.020  
4.450  
0.810  
1.270  
4.950  
1.320  
J
Dia.  
Notes:  
Baseplate: Nickel plated copper  
Pins: Nickel plated copper  
Microsemi  
Working Peak  
Repetitive Peak  
Reverse Voltage Reverse Voltage  
Catalog Number  
Ultra Fast Recovery  
UFT12010*  
UFT12015*  
UFT12020*  
100V  
150V  
200V  
100V  
150V  
200V  
300V  
400V  
500V  
600V  
700V  
800V  
175°C Junction Temperature  
V
RRM 100 to 800 Volts  
UFT12130* 300V  
UFT12140* 400V  
UFT12150*  
High surge capacity  
2 X 60 Amp current rating  
ROHS Compliant  
500V  
600V  
700V  
800V  
UFT12260*  
UFT12270*  
UFT12280*  
*Add Suffix A for Common Anode, D for Doubler  
Electrical Characteristics  
UFT121  
UFT120  
120A  
60A  
135°C  
1000A  
.975V  
UFT122  
120A  
60A  
115°C  
700A  
1.35V  
I
Square Wave  
Square Wave  
Average forward current per pkg  
Average forward current per leg  
Case Temperature  
F(AV)  
F(AV)  
C
FSM  
FM  
120A  
60A  
120°C  
800A  
1.25V  
I
T
I
R
0JC = 0.85°C/W  
T
8.3ms, half sine, J = 175°C  
Maximum surge current per leg  
Max peak forward voltage per leg  
Max reverse recovery time per leg  
Max reverse recovery time per leg  
Max peak reverse current per leg  
Max peak reverse current per leg  
Typical Junction capacitance  
V
T
I
FM = 70A: J = 25°C*  
T
t
t
1/2A, 1A, 1/4A, J = 25°C  
rr  
rr  
50ns  
60ns  
60ns  
70ns  
3.0mA  
25µA  
150pF  
75ns  
95ns  
T
70A, 130A/µs, J = 25°C  
RRM, J = 125°C*  
I
I
V
V
V
T
RM  
RM  
T
RRM, J = 25°C  
C
T
J
300pF  
150pF  
R = 10V, J = 25°C  
*Pulse test: Pulse width 300µsec, Duty cycle 2%  
Thermal and Mechanical Characteristics  
T
-55°C to 175°C  
-55°C to 175°C  
STG  
Storage temp range  
Operating junction temp range  
T
R
J
Junction to case  
0JC  
0.85°C/W  
Max thermal resistance per leg  
Max thermal resistance per pkg  
Typical thermal resistance (greased)  
Mounting Torque  
R
0
0.425°C/W Junction to case  
JC  
R
0
Case to sink  
0.1°C/W  
CS  
15-20 inch pounds  
Weight  
2.5 ounces (71 grams) typical  
www.microsemi.com  
January, 2010 - Rev. 3  

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