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UF8010G-TF3-T PDF预览

UF8010G-TF3-T

更新时间: 2024-01-21 21:58:26
品牌 Logo 应用领域
友顺 - UTC 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
6页 188K
描述
80A, 100V N-CHANNEL POWER MOSFET

UF8010G-TF3-T 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:TO-220AB包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.68
Is Samacsys:N雪崩能效等级(Eas):310 mJ
外壳连接:ISOLATED配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:100 V最大漏极电流 (ID):80 A
最大漏源导通电阻:0.015 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):320 A表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

UF8010G-TF3-T 数据手册

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UNISONIC TECHNOLOGIES CO., LTD  
UF8010  
Preliminary  
Power MOSFET  
80A, 100V N-CHANNEL  
POWER MOSFET  
„
DESCRIPTION  
The UTC UF8010 uses advanced technology to provide  
excellent RDS(ON), fast switching speed, low gate charge, and  
excellent efficiency. This device is suitable for high frequency DC-DC  
converters, UPS and motor control.  
„
FEATURES  
* RDS(ON) :12m(Typ.)  
* Lower gate-drain charge for lower switching losses  
* Perfect avalanche voltage and current performance  
* Fully characterized capacitance including effective COSS to simplify  
design  
„
SYMBOL  
„
ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Package  
Packing  
Lead Free  
Halogen Free  
UF8010G-TA3-T  
UF8010G-TF3-T  
UF8010G-TQ2-T  
1
2
D
D
D
3
S
S
S
UF8010L-TA3-T  
UF8010L-TF3-T  
UF8010L-TQ2-T  
TO-220  
TO-220F  
TO-263  
Tube  
Tube  
Tube  
G
G
G
Note: Pin Assignment: G: Gate D: Drain S: Source  
www.unisonic.com.tw  
1 of 6  
Copyright © 2011 Unisonic Technologies Co., Ltd  
QW-R502-348.c  

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