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UF5401G PDF预览

UF5401G

更新时间: 2024-11-16 03:24:07
品牌 Logo 应用领域
强茂 - PANJIT 二极管开关
页数 文件大小 规格书
2页 38K
描述
GLASS PASSIVATED JUNCTION ULTRAFAST SWITCHING RCTIFIER

UF5401G 数据手册

 浏览型号UF5401G的Datasheet PDF文件第2页 
DATA SHEET  
UF5401G~UF5407G  
GLASSPASSIVATEDJUNCTIONULTRAFASTSWITCHINGRCTIFIER  
Unit: inch(mm)  
DO-201AD  
3.0 Amperes  
100 to 800 Volts CURRENT  
VOLTAGE  
FEATURES  
.052(1.3)  
• Plastic package has Underwriters Laboratory  
Flammability Classification 94V-O utilizing  
Flame Retardant Epoxy Molding Compound  
.048(1.2)  
• Exceeds environmental standards of MIL-S-19500/228.  
• Ultra Fast switching for high efficiency.  
• Both normal and Pb free product are available :  
Normal : 80~95% Sn, 5~20% Pb  
Pb free: 98.5% Sn above  
.210(5.3)  
.188(4.8)  
MECHANICALDATA  
Case: Molded plastic, DO-201AD  
Terminals: Axial leads, solderable per MIL-STD-202,Method 208  
Polarity: Band denotes cathode  
Mounting Position: Any  
Weight: 0.04 ounce, 1.1 gram  
MAXIMUMRATINGSANDELECTRICALCHARACTERISTICSFEATURES  
Ratings at 25°C ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
PARAMETER  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
SYMBOL UF5401G UF5402G UF5403G UF5404G UF5405G UF5406G UF5407G UNITS  
V
V
RRM  
RMS  
100  
70  
200  
140  
200  
300  
210  
300  
400  
280  
400  
500  
350  
500  
600  
420  
600  
800  
560  
800  
V
V
V
Maximum DC Blocking Voltage  
V
DC  
100  
Maximum Average Forward Current .375"(9.5mm)  
I
AV  
3.0  
150  
1.3  
A
A
V
lead length at TA C  
=55O  
Peak Forward Surge Current : 8.3ms single half sine-  
wave superimposed on rated load(JEDEC method)  
I
FSM  
Maximum Forward Voltage at 3.0A  
V
F
1.0  
1.5  
1.7  
Maximum DC Reverse Current T  
at Rated DC Blocking Voltage  
J
=25O  
=100O  
C
C
10.0  
300  
I
R
uA  
T
J
Typical Junction capacitance (Note 1)  
Typical Thermal Resistance(Note 2)  
C
J
75  
60  
pF  
O C / W  
ns  
RθJA  
Maximum Reverse Recovery Time (Note 3)  
T
RR  
50  
75  
Operating Junction and Storage Temperature Range  
T
J
,TSTG  
-55 TO +150  
O C  
NOTES:  
1. Measured at 1 MHz and applied reverse voltage of 4.0 VDC.  
2. Thermal Resistance from Junction to Ambient and from Junction to lead length 0.375”(9.5mm) P.C.B. mounted.  
3. Test Condition: Ta = Tj Per pulse test pulse width 300uS duty 2%  
STAD-SEP.01.2004  
PAGE . 1  

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