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UF30D60D PDF预览

UF30D60D

更新时间: 2024-11-06 02:51:23
品牌 Logo 应用领域
THINKISEMI /
页数 文件大小 规格书
3页 1044K
描述
30.0 Ampere Heat Sink Dual Doubler Polarity Ultra Fast Recovery Half Bridge Rectifiers

UF30D60D 数据手册

 浏览型号UF30D60D的Datasheet PDF文件第2页浏览型号UF30D60D的Datasheet PDF文件第3页 
UF30D20D thru UF30D60D  
UF30D20D/UF30D30D/UF30D40D/UF30D50D/UF30D60D  
Pb Free Plating Product  
30.0 Ampere Heat Sink Dual Doubler Polarity Ultra Fast Recovery Half Bridge Rectifiers  
TO-3PN  
Features  
Fast switching for high efficiency  
Bottom Side Metal Heat Sink  
Low forward voltage drop  
High current capability  
Low reverse leakage current  
High surge current capability  
Application  
Automotive Inverters and Solar Inverters  
Plating Power Supply,Motor Control,SMPS and UPS  
Car Audio Amplifiers and Sound Device Systems  
Mechanical Data  
Case: Heatsink TO-3PN open metal package  
Epoxy: UL 94V-0 rate flame retardant  
Terminals: Solderable per MIL-STD-202  
method 208  
Case  
Case  
Case  
Case  
Series  
Polarity: As marked on diode body  
Mounting position: Any  
Weight: 0.65 gram approximately  
Doubler  
Common Cathode Common Anode Tandem Polarity Tandem Polarity  
Suffix "S"  
Negative  
Positive  
Suffix "C"  
Suffix "A"  
Suffix "D"  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
o
Rating at 25  
C ambient temperature unless otherwise specified.  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
UF30D30D UF30D50D  
UF30D40D UF30D60D UNIT  
SYMBOL  
UF30D20D  
V
V
V
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
200  
140  
200  
400  
280  
400  
600  
420  
600  
Maximum DC Blocking Voltage  
Maximum Average Forward Rectified  
30.0  
300  
1.3  
A
A
V
IF(AV)  
o
(Total Device 2x15A=30A)  
Current TC=125 C  
Peak Forward Surge Current, 8.3ms single  
Half sine-wave superimposed on rated load  
(JEDEC method)  
IFSM  
Maximum Instantaneous Forward Voltage  
VF  
IR  
0.98  
1.7  
@ 15.0 A  
(Per Diode/Per Leg)  
Maximum DC Reverse Current @TJ=25oC  
At Rated DC Blocking Voltage @TJ=125oC  
uA  
uA  
nS  
5.0  
100  
Maximum Reverse Recovery Time (Note 1)  
Typical junction Capacitance (Note 2)  
Trr  
CJ  
35-50  
150  
pF  
oC  
Operating Junction and Storage  
Temperature Range  
T
J, TSTG  
-55 to +150  
.
= 0.5A I = 1 0A Irr = 0.25A.  
F R  
NOTES : (1) Reverse recovery test conditions I  
(2) Thermal Resistance junction to terminal.  
(3) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.  
Page 1/3  
http://www.thinkisemi.com.tw/  
Rev.09T  
© 1995 Thinki Semiconductor Co., Ltd.  

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