Datasheet > UBD850

UBD850

更新时间： 2024-11-17 22:17:55

品牌	Logo	应用领域
CLARE		/
页数	文件大小	规格书
3页	95K
描述
HIGH-SPEED TRANSIENT SURGE PROTECTORS

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

UBD850 数据手册

HIGH-SPEED TRANSIENT SURGE PROTECTORS

UNI-IMPS

DESCRIPTION

CP Clare’s UNI-IMP high-speed transient surge protectors (0.55-20kV) provide the ultimate protection from high-

energy, fast-rising transients such as Nuclear EMP. These devices are constructed using a proprietary

semiconductor junction process that results in nanosecond response times combined with peak current ratings in

excess of 20kA. A unique benefit of this technology is that the breakdown voltage is virtually independent of the

rise time of the transient. In addition, the low capacitance of these devices allows for direct placement on high-

frequency lines and antenna feeds without excessive loading.

APPLICATIONS

FEATURES

■

Antenna feedlines

Test equipment

Video displays

Medical electronics

Instrumentation circuits

Fast impulse breakdown (≤120% of typical DC

breakdown to 200kV/µs)

Tight DC breakdown voltage tolerance (±10%)

Non-radioactive

■

Low capacitance

STANDARD VOLTAGES

Series

DC Breakdown

Voltage (typ)

Unit

UBD

550

600

650

750

850

1.0

1.2

1.5

2.0

2.5

3.0

4.0

5.0

6.0

7.5

10.0

12.0

15.0

20.0

UBT

and

UGT

(See detailed specifications for more information.)

www.cpclare.com

561

12 3

中文翻译

下载PDF

与UBD850相关器件

型号	品牌	获取价格	描述	数据表
UBD8C05L01	YAGEO	获取价格	静电保护器件
UBD8C12L01	YAGEO	获取价格	静电保护器件
UBD8C18L01	YAGEO	获取价格	静电保护器件
UBF80	ETC	获取价格	DUODIODE - REGELPENTODE
UBF89	NXP	获取价格	DOUBLE DIODE-PENTODE
UBF89_1	NXP	获取价格	DOUBLE DIODE-PENTODE
UBFQ31A	ZETEX	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic
UBFS17H	DIODES	获取价格	RF Small Signal Bipolar Transistor, 0.025A I(C), 1-Element, Ultra High Frequency Band, Sil
UBH1E151MNS1GS	NICHICON	获取价格	UBH
UBH1E271MNS1GS	NICHICON	获取价格	UBH