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U10BCT PDF预览

U10BCT

更新时间: 2024-11-30 05:52:47
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
5页 159K
描述
Dual Common-Cathode Ultrafast Rectifier

U10BCT 数据手册

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New ProdUuc(tF,B)10BCT thru U(F,B)10DCT  
Vishay General Semiconductor  
Dual Common-Cathode Ultrafast Rectifier  
FEATURES  
TO-220AB  
ITO-220AB  
• Oxide planar chip junction  
• Ultrafast recovery time  
• Soft recovery characteristics  
• Low switching losses, high efficiency  
• High forward surge capability  
• High frequency operation  
3
3
2
2
1
1
U10xCT  
UF10xCT  
• Meets MSL level 1, per J-STD-020, LF maximum  
peak of 245 °C (for TO-263AB package)  
PIN 1  
PIN 3  
PIN 1  
PIN 3  
PIN 2  
CASE  
PIN 2  
• Solder dip 260 °C, 40 s (for TO-220AB, IT-220AB)  
TO-263AB  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
K
TYPICAL APPLICATIONS  
2
For use in low voltage, high frequency rectifier of  
switching power supplies, freewheeling diodes,  
dc-to-dc converters or polarity protection application.  
1
UB10xCT  
K
PIN 1  
PIN 2  
HEATSINK  
MECHANICAL DATA  
Case: TO-220AB, ITO-220AB and TO-263AB  
Epoxy meets UL 94V-0 flammability rating  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
E3 suffix for consumer grade, meets JESD 201 class  
1A whisker test  
PRIMARY CHARACTERISTICS  
IF(AV)  
VRRM  
IFSM  
trr  
5 A x 2  
100 V, 150 V, 200 V  
55 A  
25 ns  
VF  
0.89 V  
Polarity: As marked  
TJ max.  
150 °C  
Mounting Torque: 10 in-lbs maximum  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
C
PARAMETER  
SYMBOL U(F,B)10BCT  
U(F,B)10CCT  
U(F,B)10DCT  
UNIT  
Maximum repetitive peak reverse voltage  
VRRM 100  
150  
200  
V
total device  
per diode  
10  
5
Max. average forward rectified current (Fig. 1)  
IF(AV)  
A
A
Peak forward surge current 8.3 ms single half  
sine-wave superimposed on rated load per diode  
IFSM  
55  
8
Electrostatic discharge capacitor voltage,  
VC  
kV  
human body model: C = 150 pF, R = 1.5 kΩ (contact mode)  
Isolation voltage (ITO-220AB only)  
from terminal to heatsink t = 1 min per diode  
VAC  
1500  
V
Operating junction and storage temperature range  
TJ, TSTG  
- 55 to + 150  
°C  
Document Number: 88967  
Revision: 13-May-08  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
1

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