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TZX30B-TAP PDF预览

TZX30B-TAP

更新时间: 2024-11-20 18:13:51
品牌 Logo 应用领域
威世 - VISHAY 测试二极管
页数 文件大小 规格书
8页 94K
描述
Zener Diode, 29.9V V(Z), 2.3%, 0.5W,

TZX30B-TAP 数据手册

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TZX...  
Vishay Semiconductors  
Silicon Epitaxial Planar Z–Diodes  
Features  
D Very sharp reverse characteristic  
D Low reverse current level  
D Very high stability  
D Low noise  
D Available with tighter tolerances  
Applications  
94 9367  
Voltage stabilization  
Order Instruction  
Type  
TZX2V4A  
Ordering Code  
TZX2V4A–TAP  
Remarks  
Ammopack  
Absolute Maximum Ratings  
T = 25_C  
j
Parameter  
Test Conditions  
Type  
Symbol  
Value  
500  
Unit  
mW  
mA  
°C  
Power dissipation  
Z–current  
l=4 mm, T =25 °C  
P
L
V
I
P /V  
V
Z
Z
Junction temperature  
Storage temperature range  
T
175  
j
T
stg  
–65...+175  
°C  
Maximum Thermal Resistance  
T = 25_C  
j
Parameter  
Test Conditions  
Symbol  
Value  
300  
Unit  
K/W  
Junction ambient  
l=4 mm, T =constant  
R
thJA  
L
Electrical Characteristics  
T = 25_C  
j
Parameter  
Test Conditions  
I =200mA  
Type  
Symbol Min Typ Max Unit  
1.5  
Forward voltage  
V
V
F
F
Document Number 85614  
Rev. A6, 08-Aug-02  
www.vishay.com  
1 (8)  

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