Datasheet > TZMB33-GS18

TZMB33-GS18

更新时间： 2025-11-02 18:21:59

品牌	Logo	应用领域
威世 - VISHAY		测试二极管
页数	文件大小	规格书
6页	61K
描述
Zener Diode, 33V V(Z), 2%, 0.5W,

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中文翻译

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数据手册
替代型号

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TZMB33-GS18 数据手册

TZMB...

Vishay Telefunken

Silicon Epitaxial Planar Z–Diodes

Features

Very sharp reverse characteristic

Low reverse current level

Available with tighter tolerances

Very high stability

Low noise

V –tolerance ± 2%

94 9371

Applications

Voltage stabilization

Order Instruction

Type

Ordering Code

Remarks

TZMB2V4

TZMB2V4–GS08

Tape and Reel

Absolute Maximum Ratings

T = 25 C

Parameter

Power dissipation

Z–current

Junction temperature

Storage temperature range

Test Conditions

Type

Symbol

Value

500

Unit

300K/W

thJA

P /V

175

–65...+175

stg

Maximum Thermal Resistance

T = 25 C

Parameter

Junction ambient

Test Conditions

on PC board 50 mmx50 mmx1.6 mm

Symbol

thJA

Value

500

Unit

K/W

Electrical Characteristics

T = 25 C

Parameter

Forward voltage

Test Conditions

I =200mA

Type

Symbol Min

Typ Max Unit

1.5

Document Number 85610

Rev. 4, 12-Mar-01

www.vishay.com

1 (6)

12 3 4 5 6

中文翻译

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TZMB33-GS18 替代型号

型号	品牌	替代类型	描述	数据表
BZV55-B33	NEXPERIA	功能相似	Voltage regulator diodesProduction

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