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TZM5251B PDF预览

TZM5251B

更新时间: 2024-11-30 22:41:51
品牌 Logo 应用领域
威世 - VISHAY 二极管齐纳二极管测试
页数 文件大小 规格书
4页 62K
描述
Silicon Z-Diodes

TZM5251B 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Obsolete零件包装代码:DO-213AA
包装说明:O-LELF-R2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.75
Is Samacsys:N外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:ZENER DIODEJEDEC-95代码:DO-213AA
JESD-30 代码:O-LELF-R2JESD-609代码:e2
湿度敏感等级:1元件数量:1
端子数量:2封装主体材料:GLASS
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):260极性:UNIDIRECTIONAL
最大功率耗散:0.5 W认证状态:Not Qualified
标称参考电压:22 V表面贴装:YES
技术:ZENER端子面层:TIN SILVER
端子形式:WRAP AROUND端子位置:END
处于峰值回流温度下的最长时间:NOT SPECIFIED最大电压容差:5%
工作测试电流:5.6 mABase Number Matches:1

TZM5251B 数据手册

 浏览型号TZM5251B的Datasheet PDF文件第2页浏览型号TZM5251B的Datasheet PDF文件第3页浏览型号TZM5251B的Datasheet PDF文件第4页 
TZM5221B...TZM5267B  
Vishay Telefunken  
Silicon Z–Diodes  
Features  
Very sharp reverse characteristic  
Very high stability  
Electrical data identical with the devices  
1N5221B...1N5267B  
Low reverse current level  
V –tolerance ± 5%  
Z
94 9371  
Applications  
Voltage stabilization  
Absolute Maximum Ratings  
T = 25 C  
j
Parameter  
Power dissipation  
Z–current  
Junction temperature  
Storage temperature range  
Test Conditions  
<300K/W, T =25 C  
Type  
Symbol  
Value  
500  
Unit  
mW  
mA  
C
R
thJA  
P
V
amb  
I
Z
P /V  
V
Z
T
175  
–65...+175  
j
T
stg  
C
Maximum Thermal Resistance  
T = 25 C  
j
Parameter  
Test Conditions  
Symbol  
R
thJA  
Value  
500  
Unit  
K/W  
Junction ambient on PC board 50mmx50mmx1.6mm  
Electrical Characteristics  
T = 25 C  
j
Parameter  
Forward voltage  
Test Conditions  
I =200mA  
Type  
Symbol Min  
Typ Max Unit  
1.1  
V
F
V
F
Document Number 85609  
Rev. 2, 01-Apr-99  
www.vishay.de FaxBack +1-408-970-5600  
1 (4)  

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