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TZ630N24KOFHPSA1 PDF预览

TZ630N24KOFHPSA1

更新时间: 2024-11-19 15:55:47
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网栅极
页数 文件大小 规格书
13页 383K
描述
Silicon Controlled Rectifier, 1500A I(T)RMS, 2400V V(DRM), 2400V V(RRM), 1 Element, MODULE-4

TZ630N24KOFHPSA1 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:FLANGE MOUNT, R-XXFM-X4Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.30.00.80
Factory Lead Time:8 weeks风险等级:5.69
Is Samacsys:N外壳连接:ISOLATED
配置:SINGLE最大直流栅极触发电流:250 mA
JESD-30 代码:R-XXFM-X4元件数量:1
端子数量:4封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED最大均方根通态电流:1500 A
断态重复峰值电压:2400 V重复峰值反向电压:2400 V
表面贴装:NO端子形式:UNSPECIFIED
端子位置:UNSPECIFIED处于峰值回流温度下的最长时间:NOT SPECIFIED
触发设备类型:SCRBase Number Matches:1

TZ630N24KOFHPSA1 数据手册

 浏览型号TZ630N24KOFHPSA1的Datasheet PDF文件第2页浏览型号TZ630N24KOFHPSA1的Datasheet PDF文件第3页浏览型号TZ630N24KOFHPSA1的Datasheet PDF文件第4页浏览型号TZ630N24KOFHPSA1的Datasheet PDF文件第5页浏览型号TZ630N24KOFHPSA1的Datasheet PDF文件第6页浏览型号TZ630N24KOFHPSA1的Datasheet PDF文件第7页 
Datenblatt / Data sheet  
N
Netz-Thyristor-Modul  
TZ630N  
Phase Control Thyristor Module  
TZ630N  
Elektrische Eigenschaften / Electrical properties  
Höchstzulässige Werte / Maximum rated values  
Periodische Vorwärts- und Rückwärts-Spitzensperrspannung Tvj = -40°C... Tvj max  
repetitive peak forward off-state and reverse voltages  
2200  
2600  
2400 V  
2800 V  
VDRM,VRRM  
2200  
2600  
2400 V  
2800 V  
Vorwärts-Stoßspitzensperrspannung  
non-repetitive peak forward off-state voltage  
Tvj = -40°C... Tvj max  
VDSM  
2300  
2700  
2500 V  
2900 V  
Rückwärts-Stoßspitzensperrspannung  
non-repetitive peak reverse voltage  
Tvj = +25°C... Tvj max  
VRSM  
1500 A  
Durchlaßstrom-Grenzeffektivwert  
maximum RMS on-state current  
Dauergrenzstrom  
average on-state current  
ITRMSM  
ITAVM  
630 A  
955 A  
TC = 85°C  
TC = 52°C  
25.500 A  
23.000 A  
Stoßstrom-Grenzwert  
surge current  
Tvj = 25 °C, tP = 10 ms  
Tvj = Tvj max, tP = 10 ms  
ITSM  
3.250.000 A²s  
2.650.000 A²s  
Grenzlastintegral  
I²t-value  
Tvj = 25 °C, tP = 10 ms  
Tvj = Tvj max, tP = 10 ms  
I²t  
DIN IEC 747-6  
150 A/µs  
Kritische Stromsteilheit  
(diT/dt)cr  
(dvD/dt)cr  
f = 50 Hz, iGM = 1 A, diG/dt = 1 A/µs  
critical rate of rise of on-state current  
Kritische Spannungssteilheit  
critical rate of rise of off-state voltage  
Tvj = Tvj max, vD = 0,67 VDRM  
6.Kennbuchstabe / 6th letter F  
1000 V/µs  
Charakteristische Werte / Characteristic values  
Durchlaßspannung  
max.  
2,18 V  
0,95 V  
0,37 mΩ  
250 mA  
2,0 V  
Tvj = Tvj max , iT = 3000 A  
Tvj = Tvj max  
vT  
on-state voltage  
Schleusenspannung  
threshold voltage  
Ersatzwiderstand  
slope resistance  
Zündstrom  
gate trigger current  
Zündspannung  
gate trigger voltage  
Nicht zündender Steuerstrom  
gate non-trigger current  
Nicht zündende Steuerspannung  
gate non-trigger voltage  
V(TO)  
rT  
Tvj = Tvj max  
max.  
Tvj = 25°C, vD = 6 V  
Tvj = 25°C, vD = 6 V  
IGT  
VGT  
IGD  
VGD  
IH  
max.  
max.  
max.  
Tvj = Tvj max , vD = 6 V  
Tvj = Tvj max , vD = 0,5 VDRM  
Tvj = Tvj max , vD = 0,5 VDRM  
10 mA  
5 mA  
0,25 V  
max.  
Haltestrom  
holding current  
Einraststrom  
latching current  
Tvj = 25°C, vD = 6 V, RA = 5 Ω  
Tvj = 25°C, vD = 6 V, RGK 10 Ω  
max.  
500 mA  
IL  
max. 2500 mA  
iGM = 1 A, diG/dt = 1 A/µs, tg = 20 µs  
Vorwärts- und Rückwärts-Sperrstrom  
forward off-state and reverse current  
Zündverzug  
gate controlled delay time  
Tvj = Tvj max  
iD, iR  
tgd  
max.  
max.  
200 mA  
4,5 µs  
vD = VDRM, vR = VRRM  
DIN IEC 747-6  
Tvj = 25 °C,iGM = 1 A, diG/dt = 1 A/µs  
C.Drilling  
date of publication: 06.03.03  
prepared by:  
revision:  
1
approved by: J. Novotny  
BIP AC / BIP AM / 00-08-21, K.-A. Rüther  
1/12  
A 18/00  
Seite/page  

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