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TV15J201A-G PDF预览

TV15J201A-G

更新时间: 2024-11-24 00:29:35
品牌 Logo 应用领域
上华 - COMCHIP /
页数 文件大小 规格书
5页 119K
描述
SMD Transient Voltage Suppressor

TV15J201A-G 数据手册

 浏览型号TV15J201A-G的Datasheet PDF文件第2页浏览型号TV15J201A-G的Datasheet PDF文件第3页浏览型号TV15J201A-G的Datasheet PDF文件第4页浏览型号TV15J201A-G的Datasheet PDF文件第5页 
SMD Transient Voltage Suppressor  
TV15CJ6V8-G Thru. TV15CJ601-G  
Breakdown Voltage: 6.8 to 600 Volts  
Peak Pulse Power : 1500Watts  
RoHS Device  
Features  
- Glass passivated chip.  
SMC/DO-214AB  
- 1500W peak pulse power capability with a 10/1000µs  
waveform, repetitive rate (duty cycle):0.01%  
0.280(7.02)  
0.260(6.52)  
- Low leakage.  
0.245(6.15)  
0.220(5.52)  
0.126(3.16)  
0.220(2.86)  
- Uni and Bidirectional unit.  
- Excellent clamping capability.  
- Very fast response time.  
- UL recognized file # E349157  
R
0.320(8.02)  
0.305(7.64)  
- Range: TV15CJ6V8(C)A thru. TV15CJ121(C)A  
0.012(0.30)  
0.006(0.15)  
0.103(2.59)  
0.079(1.98)  
Mechanical Data  
- Case: DO-214AB/SMC molded plastic.  
- Epoxy: UL 94V-0 rate flame retardant  
0.008(0.20)  
0.000(0.00)  
0.060(1.51)  
0.030(0.75)  
- Terminals: Solderable per MIL-STD-750, method 2026.  
- Polarity: Color band denoted cathode  
end except bipolar.  
Dimensions in inches and (millimeter)  
- Weight: 0.230 gram (approx.)  
Maximum Ratings and Electrical Characteristics  
Rating at 25°C ambient temperature unless otherwise specifiec.  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
Symbol  
Characteristics  
Value  
1500  
Units  
Peak power dissipation with a 10/1000μs  
PPP  
IPP  
W
A
waveform(1)  
Peak pulse current with a 10/1000μs  
See Next Table  
6.5  
waveform(1)  
Power dissipation on infinite heatsink  
at TL=75°C  
PD  
W
Peak forward surge current, 8.3mS single  
half sine-wave superimposed on rated  
load, uni-directional only(2)  
IFSM  
VF  
200  
A
V
Maximum instantaneous forward voltage  
at 100A for uni-directional only (3)  
3.5/5.0  
Operation junction temperature range  
Storage temperature range  
TJ  
-55 to +150  
-55 to +150  
°C  
°C  
TSTG  
1. Non-repetitive current pulse, per Fig.5 and derated above TA=25°C, per Fig.1  
2. Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle=4 pulses per minute maximum.  
3. VF<3.5V for devices of VBR<200V and VF<5.0V for devices of VBR>201V  
Notes:  
Company reserves the right to improve product design , functions and reliability without notice.  
REV:B  
Page 1  
QW-BTV17  
Comchip Technology CO., LTD.  

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