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TV06B850KB-G PDF预览

TV06B850KB-G

更新时间: 2024-11-23 18:09:35
品牌 Logo 应用领域
上华 - COMCHIP 二极管
页数 文件大小 规格书
7页 129K
描述
Trans Voltage Suppressor Diode, 85V V(RWM), Bidirectional,

TV06B850KB-G 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.71
击穿电压标称值:104.7 V最大钳位电压:151 V
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE极性:BIDIRECTIONAL
最大重复峰值反向电压:85 V子类别:Transient Suppressors
表面贴装:YESBase Number Matches:1

TV06B850KB-G 数据手册

 浏览型号TV06B850KB-G的Datasheet PDF文件第2页浏览型号TV06B850KB-G的Datasheet PDF文件第3页浏览型号TV06B850KB-G的Datasheet PDF文件第4页浏览型号TV06B850KB-G的Datasheet PDF文件第5页浏览型号TV06B850KB-G的Datasheet PDF文件第6页浏览型号TV06B850KB-G的Datasheet PDF文件第7页 
SMD Transient Voltage Suppressor  
TV06B5V0-G Thru. TV06B441-G  
Working Peak Reverse voltage: 5.0 ~ 440Volts  
Power Dissipation: 600 Watts  
RoHS Device  
Features  
SMB/DO-214AA  
-Ideally for surface mount applications.  
-Easy pick and place.  
-Plastic package has Underwriters Lab.  
flammability classification 94V-0.  
0.155(3.94)  
0.130(3.30)  
0.087(2.20)  
0.077(1.96)  
-Typical IR less than 1μA above 10V.  
0.191(4.85)  
0.171(4.35)  
-Fast response time: typically less than 1nS for  
uni-direction, less than 5nS for bi-directional,  
form 0V to BV min.  
0.012(0.30)  
0.006(0.15)  
0.096(2.44)  
0.083(2.13)  
Mechanical Data  
-Case: JEDEC DO-214AA molded plastic.  
0.008(0.20)  
0.001(0.02)  
0.060(1.52)  
0.030(0.75)  
-Terminals: solderable per MIL-STD-750,  
method 2026  
0.216(5.50)  
0.201(5.10)  
-Polarity: Cathode band denoted.  
-Weight: 0.093 gram approx.  
Dimensions in inches and (millimeter)  
Maximum Ratings and Electrical Characteristics  
Rating at 25 OC ambient temperature unless otherwise specified.  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
Characteristics  
Symbol  
PPPM  
Value  
600  
Units  
W
Peak power dissipation on 10/1000μS  
waveform (Note 1, Fig.1)  
Peak pulse current on 10/1000μS waveform  
(Note 1, Fig.3)  
IPPM  
See Next Table  
A
Steady state power dissipation at TL=75  
(Note 2)  
OC  
PM(AV)  
IFSM  
VF  
5.0  
100  
W
A
Peak forward surge current, 8.3mS single half  
sine-wave superimposed on rated load, uni-  
directional only (Note 3)  
Maximum instantaneous forward voltage at  
35.0A for uni-directional only (Note 3, 4)  
3.5/5.0  
V
OC  
OC  
Maximum operation junction temperature  
Storage temperature range  
TJ  
150  
TSTG  
-55 to +150  
Note:  
1. Non-repetitive current pulse, per Fig. 5 and derated above TA=25 OC per Fig.1  
2. Measured on 8.3 mS single half sine-wave or equivalent square wave, duty cycle=4 pulse per minute maximum.  
3. VF<3.5V for devices of VBR <200V and VF <5.0V for devices of VBR >201V  
REV:B  
Page 1  
QW-BTV02  

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