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TURF2060CTG PDF预览

TURF2060CTG

更新时间: 2024-02-09 07:49:18
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THINKISEMI /
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2页 737K
描述
ThinkiSemi 20.0 Ampere Insulated Common Cathode Ultra Fast Recovery Rectifiers

TURF2060CTG 数据手册

 浏览型号TURF2060CTG的Datasheet PDF文件第2页 
TURF2020CTG thru TURF2060CTG  
TURF2020CTG/TURF2040CTG/TURF2060CTG  
Pb Free Plating Product  
ThinkiSemi 20.0 Ampere Insulated Common Cathode Ultra Fast Recovery Rectifiers  
ITO-220AB/TO-220F-3L  
Unit : inch (mm)  
Features  
Fast switching for high efficiency  
Low forward voltage drop  
High current capability  
.189(4.8)  
.406(10.3)  
.165(4.2)  
.381(9.7)  
.134(3.4)  
.130(3.3)  
.118(3.0)  
.114(2.9)  
Low reverse leakage current  
High surge current capability  
Application  
Automotive Inverters and Solar Inverters  
Plating Power Supply,SMPS and UPS  
Car Audio Amplifiers and Sound Device Systems  
.114(2.9)  
.098(2.5)  
.071(1.8)  
.055(1.4)  
.055(1.4)  
.039(1.0)  
.035(0.9)  
.011(0.3)  
.032(.8)  
MAX  
Mechanical Data  
.1  
(2.55)  
.1  
Case: ITO-220AB full plastic isolated package  
Epoxy: UL 94V-0 rate flame retardant  
Terminals: Solderable per MIL-STD-202  
method 208  
(2.55)  
Case  
Case  
Case  
Case  
Polarity: As marked on diode body  
Mounting position: Any  
Weight: 2.0 gram approximately  
Doubler  
Tandem Polarity Tandem Polarity  
Suffix "CTD" Suffix "CTS"  
Series  
Negative  
Common Cathode Common Anode  
Suffix "CTG" Suffix "CTA"  
Positive  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25 ambient temperature unless otherwise specified.  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
UNIT  
SYMBOL  
TURF2020CTG TURF2040CTG TURF2060CTG  
V
V
V
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
V
RRM  
RMS  
200  
140  
200  
400  
280  
400  
600  
420  
600  
V
Maximum DC Blocking Voltage  
V
DC  
Maximum Average Forward Rectified  
20.0  
A
A
V
IF(AV)  
(Total Device 2x10A=20A)  
Current TC  
=125  
Peak Forward Surge Current, 8.3ms single  
Half sine-wave superimposed on rated load  
(JEDEC method)  
I
FSM  
200  
Maximum Instantaneous Forward Voltage  
V
F
0.95  
120  
1.25  
1.50  
(Per Diode/Per Leg)  
@ 10.0 A  
5.0  
50  
μA  
μA  
Maximum DC Reverse Current @T  
At Rated DC Blocking Voltage @T  
J
=25  
I
R
J
=125  
nS  
pF  
Maximum Reverse Recovery Time (Note 1)  
Typical junction Capacitance (Note 2)  
Typical Thermal Resistance (Note 3)  
Trr  
35  
C
J
70  
R
JC  
3.0  
/W  
Operating Junction and Storage  
Temperature Range  
-55 to + 175  
T , TSTG  
J
NOTES : (1) Reverse recovery test conditions IF= 0.5A, IR= 1.0A, Irr = 0.25A.  
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.  
(3) Thermal Resistance junction to case.  
Page 1/2  
http://www.thinkisemi.com.tw/  
Rev.10T  
© 1995 Thinki Semiconductor Co., Ltd.  

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