TTP120N03AT
Wuxi Unigroup Microelectronics CO.,LTD.
Electrical Characteristics(TJ =25ºC unless otherwise noted)
Value
Typ
Symbol
Parameter
Conditions
Units
Min
Max
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID =250µA,VGS =0V
VDS =30V, VGS =0V
30
--
--
--
1
V
TJ =25ºC
--
--
IDSS
Zero Gate Voltage Drain Current
μA
TJ =100ºC
--
25
IGSS
Gate-Body Leakage Current
Gate Threshold Voltage
VDS =0V, VGS =±20V
VDS =VGS, ID =250µA
VGS =10V, ID =20A
VGS =4.5V, ID =20A
VDS =10V, ID =20A
--
--
±100
2.4
3.4
4.7
--
nA
V
VGS(th)
1
1.7
2.6
3.6
--
--
mΩ
mΩ
S
RDS(ON)
Static Drain-Source On-Resistance
--
gFS
VSD
IS
Forward Transconductance
24.16
--
Diode Forward Voltage
IS =30A, VGS =0V
--
1
V
B
Maximum Body-Diode Continuous Current
--
--
105
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Input Capacitance
--
--
--
2113
801
356
--
--
--
Output Capacitance
VGS =0V, VDS =15V, f =1MHZ
pF
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
--
--
--
--
--
--
--
--
--
89
9
--
--
--
--
--
--
--
--
--
Gate Source Charge
VGS =10V,VDS =15V, ID =50A
nC
ns
Gate Drain Charge
16
12
11
40
12
60
120
Turn-On Delay Time
Turn-On Rise Time
VGS =10V,VDS =15V, ID =50A,
RG =3Ω
TD(off)
tf
Turn-Off Delay Time
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
IF =30A, di/dt =100A/μs
Qrr
nC
A. Single pulse width limited by maximum junction temperature.
B. The maximum current rating is package limited.
C. The power dissipation PD is based on TJ(MAX) =175ºC , using junction-to-case thermal resistance, and is more useful in setting
the upper dissipation limit for cases where additional heatsinking is used.
V1.0
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