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TSUS5401-MS21 PDF预览

TSUS5401-MS21

更新时间: 2024-11-25 15:55:11
品牌 Logo 应用领域
威世 - VISHAY 半导体
页数 文件大小 规格书
5页 99K
描述
Infrared LED, LAMP,IRED,950NM PEAK WAVELENGTH,LED-2B

TSUS5401-MS21 技术参数

生命周期:ActiveReach Compliance Code:unknown
风险等级:5.67最大正向电流:0.15 A
最大正向电压:3.4 V安装特点:THROUGH HOLE MOUNT
最高工作温度:85 °C最低工作温度:-40 °C
峰值波长:950 nm最大反向电压:5 V
半导体材料:GaAs光谱带宽:5e-8 m
子类别:Infrared LEDs表面贴装:NO
视角:44 degBase Number Matches:1

TSUS5401-MS21 数据手册

 浏览型号TSUS5401-MS21的Datasheet PDF文件第2页浏览型号TSUS5401-MS21的Datasheet PDF文件第3页浏览型号TSUS5401-MS21的Datasheet PDF文件第4页浏览型号TSUS5401-MS21的Datasheet PDF文件第5页 
TSUS5400, TSUS5401, TSUS5402  
Vishay Semiconductors  
Infrared Emitting Diode, 950 nm, GaAs  
FEATURES  
• Package type: leaded  
• Package form: T-1¾  
• Dimensions (in mm): Ø 5  
• Leads with stand-off  
• Peak wavelength: λp = 950 nm  
• High reliability  
• Angle of half intensity: ϕ = 22ꢀ  
• Low forward voltage  
94 8390  
• Suitable for high pulse current operation  
• Good spectral matching with Si photodetectors  
• Compliant to RoHS directive 2002/95/EC and in  
accordance to WEEE 2002/96/EC  
DESCRIPTION  
TSUS5400 is an infrared, 950 nm emitting diode in GaAs  
technology molded in a blue-gray tinted plastic package.  
• Halogen-free according to IEC 61249-2-21 definition  
APPLICATIONS  
• Infrared remote control and free air transmission systems  
with low forward voltage and small package requirements  
• Emitter in transmissive sensors  
• Emitter in reflective sensors  
PRODUCT SUMMARY  
COMPONENT  
Ie (mW/sr)  
ϕ (deg)  
λ
P (nm)  
tr (ns)  
TSUS5400  
TSUS5401  
TSUS5402  
14  
17  
20  
22  
22  
22  
950  
950  
950  
800  
800  
800  
Note  
Test conditions see table “Basic Characteristics”  
ORDERING INFORMATION  
ORDERING CODE  
PACKAGING  
REMARKS  
PACKAGE FORM  
TSUS5400  
Bulk  
Bulk  
Bulk  
MOQ: 4000 pcs, 4000 pcs/bulk  
MOQ: 4000 pcs, 4000 pcs/bulk  
MOQ: 4000 pcs, 4000 pcs/bulk  
T-1¾  
T-1¾  
T-1¾  
TSUS5401  
TSUS5402  
Note  
MOQ: minimum order quantity  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
TEST CONDITION  
SYMBOL  
VALUE  
UNIT  
Reverse voltage  
VR  
IF  
5
150  
V
mA  
mA  
A
Forward current  
Peak forward current  
tp/T = 0.5, tp = 100 µs  
tp = 100 µs  
IFM  
IFSM  
PV  
300  
Surge forward current  
Power dissipation  
2.5  
170  
mW  
ꢀC  
Junction temperature  
Operating temperature range  
Storage temperature range  
Soldering temperature  
Tj  
100  
Tamb  
Tstg  
Tsd  
- 40 to + 85  
- 40 to + 100  
260  
ꢀC  
ꢀC  
t 5 s, 2 mm from case  
ꢀC  
Thermal resistance junction/ambient  
Note  
amb = 25 ꢀC, unless otherwise specified  
J-STD-051, leads 7 mm, soldered on PCB  
RthJA  
230  
K/W  
T
Document Number: 81056  
Rev. 1.7, 25-Jun-09  
For technical questions, contact: emittertechsupport@vishay.com  
www.vishay.com  
1

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