Datasheet > TSR10L300CTB

TSR10L300CTB

更新时间： 2024-11-17 02:52:07

品牌	Logo	应用领域
佑风微 - YFW		/
页数	文件大小	规格书
4页	904K
描述
Trench MOS Barrier Schottky Rectifier

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中文翻译

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数据手册

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TSR10L300CTB 数据手册

TSR10L300CT-CTF-CTI-CTB

Trench MOS Barrier Schottky Rectifier

Reverse Voltage - 300 V

Forward Current - 10 A

FEATURES



Advanced trench technology

Low forward voltage drop

Low power losses

High efficiency operation

Lead free in comply with EU RoHS 2011/65/EU directives

MECHANICAL DATA



Case: TO-220AB/ITO220AB/TO-262/TO-263



Terminals: Solderable per MIL-STD-750, Method 2026

Maximum Ratings (Per Leg) at Ta=25°C unless otherwise specified

Parameter

Maximum Repetitive Peak Reverse Voltage

Maximum RMS voltage

Symbols

Value

Units

300

RRM

RMS

300

Maximum DC Blocking Voltage

300

VDC

Per device

Per diode

Maximum Average Forward Rectified Current

F(AV)

Peak Forward Surge Current, 8.3ms Single Half Sine-wave

superimposed on rated load per diode

100

FSM

Operating Temperature Range

Storage Temperature Range

-65 ~ +150

°C

-65 ~ +150

STG

°C

TO-220AB/TO-263

°C/W

Typical Thermal Resistance Per diode(munted

on FR-4 PCB)

RθJC

ITO-220AB/TO-262

Note1: Thermal resistance from Junction to case per leg mounted on heatsink.

Electrical Characteristics (Per Leg) unless otherwise specified

Characteristics

Forward Voltage Drop(Note2)

Symbols

Value

Units

Typ

Max

0.85

0.78

TA=25°C

TA=125°C

TA=25°C

TA=125°C

at I_F=5A Instantaneous forward voltage per diode

Instantaneous reverse current per diode at rated

reverse voltage

Note2: (1)Pulse test: 300 μs pulse width, 1 % duty cycle

(2) Pulse test: Pulse width ≦ 40 ms

www.yfwdiode.com

Dongguan YFW Electronics Co, Ltd.

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