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TSMF1020 PDF预览

TSMF1020

更新时间: 2024-11-19 22:49:31
品牌 Logo 应用领域
威世 - VISHAY 半导体红外LED光电二极管
页数 文件大小 规格书
9页 484K
描述
High Speed IR Emitting Diode in SMD Package

TSMF1020 数据手册

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TSMF1000/1020/1030/1040  
VISHAY  
Vishay Semiconductors  
High Speed IR Emitting Diode in SMD Package  
Description  
TSMF1000 series are high speed infrared emitting  
TSMF1000  
TSMF1020  
diodes in GaAlAs/GaAs/GaAlAs double hetero tech-  
nology (DH) molded in clear SMD package with dome  
lens.  
TSMF1030  
DH chip technology represents best performance for  
speed, radiant power, forward voltage and longterm  
reliability.  
TSMF1040  
Features  
• High speed  
• Extra high radiant power  
• Low forward voltage  
• Suitable for high pulse current operation  
• Angle of half intensity ϕ = 17°  
• Peak wavelength λp = 870 nm  
• Longterm reliability  
Applications  
IrDA compatible data transmission  
Miniature light barrier  
For control and drive circuits  
Photointerrupters  
• Matched with PIN Photodiode TEMD1000  
• Versatile terminal configurations  
Incremental sensors  
Absolute Maximum Ratings  
T
= 25 °C, unless otherwise specified  
amb  
Parameter  
Test condition  
Symbol  
Value  
Unit  
V
Reverse Voltage  
V
5
100  
R
Forward Current  
I
mA  
mA  
A
F
Peak Forward Current  
Surge Forward Current  
Power Dissipation  
t /T = 0.5, t = 100 µs  
I
FM  
200  
p
p
t = 100 µs  
I
0.8  
p
FSM  
P
190  
mW  
°C  
V
Junction Temperature  
Operating Temperature Range  
Storage Temperature Range  
Soldering Temperature  
Thermal Resistance Junction/Ambient  
T
100  
j
T
- 40 to + 85  
- 40 to + 100  
<260  
°C  
amb  
T
°C  
stg  
t 5sec  
T
°C  
sd  
R
400  
K/W  
thJA  
Basic Characteristics  
T
T
= 25 °C, unless otherwise specified  
= 25 °C, unless otherwise specified  
amb  
amb  
Parameter  
Test condition  
Symbol  
Min  
Typ.  
1.3  
Max  
1.5  
Unit  
V
Forward Voltage  
I = 20 mA  
V
V
F
F
F
I = 1 A, t = 100 µs  
2.4  
V
mV/K  
µA  
F
p
Temp. Coefficient of V  
Reverse Current  
I = 1.0mA  
TK  
I
- 1.7  
F
F
VF  
V
V
= 5 V  
10  
R
R
R
Junction Capacitance  
= 0 V, f = 1 MHz, E = 0  
C
160  
pF  
j
Document Number 81061  
Rev. 6, 21-May-03  
www.vishay.com  
1

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