TSMBJ0510C-TP

更新时间： 2024-01-26 05:05:53

品牌	Logo	应用领域
美微科 - MCC		触发装置硅浪涌保护器光电二极管
页数	文件大小	规格书
4页	426K
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中文翻译

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数据手册

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TSMBJ0510C-TP 数据手册

TSMBJ0506C

THRU

TSMBJ0524C

M C C

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

21201 Itasca Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

Features

Transient Voltage

Protection Device

75 to 320 Volts

Oxide-Glass passivated Junction

Bi-Directional protection in a single device

Surge capabilities up to 80A@10/1000us or 250A@8/20us

High Off-State impedance and Low On-State voltage

Plastic material has UL flammability classification 94V-0

DO-214AA

(SMBJ)

Mechanical Data

Case : Molded plastic

Cathode Band

Polarity : None cathode band denotes

Approx Weight : 0.093grams

Maximum Rating

Characteristic

Non-repetitive peak

impulse current

Symbol

Value

Unit

10/1000us

80A

Non-repetitive peak

On-state current

Operating temperature

range

Junction and storage

temperature range

8.3ms, one-half

cycle

I_TSM

30A

-40~150^oC

-55~150^oC

DIMENSIONS

INCHES

MIN

.078

.077

.002

---

.030

.065

.205

.160

.130

MIN

T_J, T

STG

DIM

MAX

.096

.083

.008

.02

MAX

2.44

2.10

.20

NOTE

2.00

1.96

.05

---

.51

.060

.091

.220

.180

.155

.76

1.52

2.32

5.59

4.57

3.94

1.65

5.21

4.06

3.30

Thermal Resistance

Characteristic

Thermal Resistance

junction to lead

Symbol

Value

20^oC/W

Unit

SUGGESTED SOLDER

PAD LAYOUT

0.090"

Thermal Resistance

junction to ambient

On recommended

pad layout

100^oC/W

Typical positive

temperature

coefficient for

0.085”

0.1%/^oC

△

T_J

V_BR

breakdown voltage

0.070”

www.mccsemi.com

12 3 4

中文翻译

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