5秒后页面跳转
TSMBJ1006C PDF预览

TSMBJ1006C

更新时间: 2024-01-06 12:20:36
品牌 Logo 应用领域
美微科 - MCC 装置
页数 文件大小 规格书
4页 426K
描述
Transient Voltage Protection Device 75 to 320 Volts

TSMBJ1006C 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:DO-214AA包装说明:SMALL OUTLINE, R-PDSO-C2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.30.00.80
风险等级:5.88最大转折电压:98 V
配置:SINGLE最大断态直流电压:75 V
JEDEC-95代码:DO-214AAJESD-30 代码:R-PDSO-C2
JESD-609代码:e0通态非重复峰值电流:50 A
元件数量:1端子数量:2
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):240
认证状态:Not Qualified表面贴装:YES
端子面层:TIN LEAD端子形式:C BEND
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
触发设备类型:SILICON SURGE PROTECTOR

TSMBJ1006C 数据手册

 浏览型号TSMBJ1006C的Datasheet PDF文件第2页浏览型号TSMBJ1006C的Datasheet PDF文件第3页浏览型号TSMBJ1006C的Datasheet PDF文件第4页 
TSMBJ1006C  
THRU  
TSMBJ1024C  
M C C  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
21201 Itasca Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
Features  
Transient Voltage  
Protection Device  
75 to 320 Volts  
·
·
·
·
·
Oxide-Glass passivated Junction  
Bi-Directional protection in a single device  
Surge capabilities up to 100A@10/1000us or 400A@8/20us  
High Off-State impedance and Low On-State voltage  
Plastic material has UL flammability classification 94V-0  
DO-214AA  
(SMBJ)  
Mechanical Data  
H
·
·
·
Case : Molded plastic  
Cathode Band  
Polarity : None cathode band denotes  
Approx Weight : 0.093grams  
J
Maximum Rating  
Characteristic  
Non-repetitive peak  
impulse current  
Symbol  
Value  
Unit  
10/1000us  
A
C
I
PP  
100A  
E
D
Non-repetitive peak  
On-state current  
Operating temperature  
range  
Junction and storage  
temperature range  
8.3ms, one-half  
cycle  
B
ITSM  
50A  
F
G
T
OP  
-40~150oC  
-55~150oC  
DIMENSIONS  
INCHES  
MIN  
.078  
.077  
.002  
---  
.030  
.065  
.205  
.160  
.130  
MM  
MIN  
TJ, T  
STG  
DIM  
A
B
C
D
E
MAX  
.096  
.083  
.008  
.02  
MAX  
2.44  
2.10  
.20  
NOTE  
2.00  
1.96  
.05  
---  
.51  
.060  
.091  
.220  
.180  
.155  
.76  
1.52  
2.32  
5.59  
4.57  
3.94  
F
1.65  
5.21  
4.06  
3.30  
G
H
J
Thermal Resistance  
Characteristic  
Thermal Resistance  
junction to lead  
Symbol  
Value  
20oC/W  
Unit  
SUGGESTED SOLDER  
PAD LAYOUT  
R
JL  
0.090"  
Thermal Resistance  
junction to ambient  
On recommended  
pad layout  
100oC/W  
R
JA  
Typical positive  
temperature  
coefficient for  
0.085”  
0.1%/oC  
TJ  
VBR  
/
breakdown voltage  
0.070”  
www.mccsemi.com  

与TSMBJ1006C相关器件

型号 品牌 获取价格 描述 数据表
TSMBJ1007C MICROSEMI

获取价格

Bi-Directional 100 Amp 50-270 Volts Thyristor Surge Protective Device
TSMBJ1007C MCC

获取价格

Transient Voltage Protection Device 75 to 320 Volts
TSMBJ1007CE3 MICROSEMI

获取价格

Silicon Surge Protector, 130V V(BO) Max, 50A, DO-214AA, PLASTIC, SMBJ, 2 PIN
TSMBJ1009C MICROSEMI

获取价格

Bi-Directional 100 Amp 50-270 Volts Thyristor Surge Protective Device
TSMBJ1009C-130 MCC

获取价格

Transient Voltage Protection Device 120 Volts
TSMBJ1009C-130P MCC

获取价格

Silicon Surge Protector, 160V V(BO) Max, 50A, DO-214AA, PLASTIC, SMBJ, 2 PIN
TSMBJ1009CE3 MICROSEMI

获取价格

Silicon Surge Protector, 185V V(BO) Max, 50A, DO-214AA,
TSMBJ100A BL Galaxy Electrical

获取价格

100V,600W,Surface Mount TVS
TSMBJ100CA BL Galaxy Electrical

获取价格

100V,600W,Surface Mount TVS
TSMBJ1010C MICROSEMI

获取价格

Bi-Directional 100 Amp 50-270 Volts Thyristor Surge Protective Device