5秒后页面跳转
捷配首页

Datasheet > TSMBG10L05C
TSMBG10L05C PDF预览

TSMBG10L05C

更新时间： 2024-02-26 23:14:25
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网光电二极管
页数 文件大小 规格书
1页 167K
描述
Trans Voltage Suppressor Diode, Bidirectional, 1 Element, Silicon

阅读下载

中文翻译

获取价格

TSMBG10L05C 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
包装说明：R-PDSO-G2Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.10.00.50
风险等级：5.92最小击穿电压：8 V
配置：SINGLE二极管元件材料：SILICON
二极管类型：TRANS VOLTAGE SUPPRESSOR DIODEJESD-30 代码：R-PDSO-G2
JESD-609代码：e0元件数量：1
端子数量：2封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性：BIDIRECTIONAL
认证状态：Not Qualified表面贴装：YES
技术：AVALANCHE端子面层：TIN LEAD
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

TSMBG10L05C 数据手册

  
Scottsdale, AZ  
8700 E. Thomas Road  
Scottsdale, AZ 85252  
(602) 941-6300  
TSMBJ10L05C  
and  
Progress Powered by Technology  
TM  
Microsemi  
TSMBJ10L12C  
Umbrella of Protection  
Features  
Bi-Directional  
100 Amp  
5 and 12 Volts  
Thyristor Surge  
Protective  
Device  
Bidirectional Transient Voltage Protection  
•
•
•
•
•
•
•
•
Surge Capabilities up to 100 Amps @ 10/1000µs or 300 Amps @ 8/20µs (note 2, 5)  
Positive Resistance Breakover Voltages  
Clamping Speeds of Nanoseconds  
Oxide-Glass Passivated Junctions  
High Off-State Impedance (low leakage) and Low On-State Voltage (crowbar action)  
Encapsulating material meets UL94VO Requirements  
ISO 9001 Certified  
(TSPD)  
Maximum Ratings  
Operating Temperature: -40°C to +150°C (note 5)  
•
Storage Temperature: -65°C to +150°C  
Repetitive Off-State Voltage (both directions): See Electrical Characteristics for VDRM  
•
•
MECHANICAL  
CHARACTERISTICS  
CASE STYLE: SMBJ (DO-214AA)  
Non-Repetitive Peak Impulse Current (IPPS): 100 A @ 10/1000µs or 300 A @ 8/20µs (note 5)  
Non-Repetitive Peak On-State Current (ITSM) @ 8.3ms (one-half cycle): 50 Amps  
•
•
and SMBG (DO-215AA)  
Electrical Characteristics @ 25°C  
SMBJ  
SMBG  
Rated Peak  
Impulse  
Current  
100 Amps  
@ 10/1000ms  
Rated  
Repetitive  
Off-State  
Voltage  
Off-State  
Leakage  
Current  
Breakdown  
Voltage  
Breakover  
Voltage  
On-State  
Voltage  
Holding  
Current  
Capacitance  
(1MH  
Z
)
A
C
A
@ I(BR) = 1mA  
(Note 4)  
@I  
T = 1A  
(Note 3)  
@VDRM  
(Note 1)  
(pulsed)  
B
B
Part Numbers  
(Note 6)  
V
DRM  
I
DRM  
V
(BR)  
V
(BO)  
V
T
I
H
CO  
@ 0  
PF  
V
Volts  
MAX.  
5
mA  
MAX.  
1
Volts  
MIN.  
8
Volts  
MAX.  
12.5  
25  
Volts  
MAX.  
3.0  
mA  
MIN.  
20  
E
MAX.  
50  
G
F
H
TSMBJ10L05C  
TSMBJ10L12C  
J
J
12  
1
18.5  
3.0  
20  
50  
D
Consult factory for additional voltage and holding current tolerance options.  
Notes:  
INCHES  
MILLIMETERS  
MIN / MAX  
MIN / MAX  
.077 / .083  
.160 / .180  
.130 / .155  
.205 / .220  
.075 / .095  
.235 / .255  
.015 / .030  
.030 / .060  
.038 / .058  
1. For rise times less than 1 kV/ms. For very fast rise times up to 1 kV/µs, V(BO) will be 110% ofV(BO) Max., The Max. I(BO) is 750mA.  
2. Critical rate of rise of on-state current is 100A/µs Max.  
A
B
C
D
E
F
G
H
J
1.96 / 2.10  
4.06 / 4.57  
3.30 / 3.94  
5.21 / 5.59  
1.91 / 2.41  
5.97 / 6.48  
0.38 / 0.76  
0.76 / 1.52  
0.97 / 1.47  
3. Maximum rate of rise of off-state voltage VDRM that will not trigger device is 5kV/µs (T  
4. Breakdown voltage V(BR) has a positive temperature coefficient of +0.1%/°C.  
5. Above 70°C, derate linearly to zero @ 150°C lead temperature.  
6. For different packages or die options replace part number prefix as follows:  
“TSMBJ” for surface mount DO-214AA with J-bend (as shown).  
“TSMBG” for surface mount DO-215AA with Gull Wing.  
“TSH” for DO-13 hermetic axial lead metal package.  
J = 70°C).  
“TSF” for T-18 axial lead plastic.  
“TSEP” for Case 1 axial, 0.040” diameter leads.  
“TSES” for Case 2 axial, 0.030” diameter leads.  
“TCD” for cellular die package.  
“TCH” for chip equivalent in hybrid applications.  
ADDITIONAL PACKAGE STYLES:  
For other package styles contact  
Microsemi Scottsdale’s TSPD Group  
for detail package dimensions.  
LEAD FINISH:  
Solder Dip or Lead Tin Plate.  
POLARITY: Bi-directional.  
Ⅲ Santa Ana: (714) 979-8220 Ⅲ Scottscale: (602) 941-6300 Ⅲ Colorado: (303) 469-2161 Ⅲ Watertown: (617) 926-0404 Ⅲ Chatsworth: (818) 701-4933  
Ⅲ Sertech Labs: (617) 924-9280 Ⅲ Ireland: (353) 65-40044 Ⅲ Bombay: (91) 22-832-002 Ⅲ Hong Kong: (852) 2692-1202  
Data Sheet SMCO310A 5/16/97  
1

中文翻译

下载PDF

与TSMBG10L05C相关器件

型号 品牌 获取价格 描述 数据表
TSMBG10L12C MICROSEMI

获取价格

 		Trans Voltage Suppressor Diode, Bidirectional, 1 Element, Silicon
TSMBJ0305C-064 MCC

获取价格

 		Transient Voltage Protection Device 58 Volts
TSMBJ0305C-064 LUNSURE

获取价格

 		Transient voltage protection device 58 volts
TSMBJ0305C-064-T MCC

获取价格

 		暂无描述
TSMBJ0305C-064-TP MCC

获取价格

 		Silicon Surge Protector, 77V V(BO) Max, 20A, DO-214AA, PLASTIC, SMBJ, 2 PIN
TSMBJ0305C-072 LUNSURE

获取价格

 		Transient voltage protection device 65 volts
TSMBJ0305C-072 MCC

获取价格

 		Transient Voltage Protection Device 65 Volts
TSMBJ0306C MCC

获取价格

 		Transient Voltage Protection Device 75 to 320 Volts
TSMBJ0306CP MCC

获取价格

 		Silicon Surge Protector, 98V V(BO) Max, 20A, DO-214AA, PLASTIC, SMBJ, 2 PIN
TSMBJ0306C-TP MCC

获取价格

 		暂无描述

与TSMBG10L05C相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证