Datasheet > TSM3N80CHC5G

TSM3N80CHC5G

更新时间： 2022-02-26 11:31:49

品牌	Logo	应用领域
TSC		/
页数	文件大小	规格书
12页	526K
描述
800V N-Channel Power MOSFET

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TSM3N80CHC5G 数据手册

TSM3N80

800V N-Channel Power MOSFET

TO-220

ITO-220

PRODUCT SUMMARY

Pin Definition:

1. Gate

2. Drain

V_DS(V)

R_DS(on)(Ω)

I_D(A)

3. Source

800

4.2 @ V_GS=10V

1.5

General Description

The TSM3N80 N-Channel Power MOSFET is

produced by new advance planar process. This

advanced technology has been especially tailored to

minimize on-state resistance, provide superior

switching performance, and withstand high energy

pulse in the avalanche and commutation mode.

TO-251

(IPAK)

TO-252

(DPAK)

Block Diagram

Features

●

Low R_DS(ON)3.3Ω (Typ.)

Low gate charge typical @ 19nC (Typ.)

Low Crss typical @ 10.2pF (Typ.)

Improved dv/dt capability

Ordering Information

Part No.

Package

Packing

75pcs / Tube

TSM3N80CH C5G

TSM3N80CP ROG

TSM3N80CZ C0

TSM3N80CI C0

TO-251

TO-252

TO-220

ITO-220

2.5Kpcs / 13” Reel

50pcs / Tube

N-Channel MOSFET

50pcs / Tube

Note: “G” denotes for Halogen Free

Absolute Maximum Rating (Ta = 25^oC unless otherwise noted)

Limit

Parameter

Symbol

Unit

IPAK/DPAK

ITO-220

TO-220

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

800

±30

Tc = 25ºC

1.83

Continuous Drain Current

I_D

Tc = 100ºC

Pulsed Drain Current *

I_DM

E_AS

I_AR

Single Pulse Avalanche Energy (Note 2)

Avalanche Current (Repetitive) (Note 1)

Repetitive Avalanche Energy (Note 1)

Peak Diode Recovery dv/dt (Note 3)

Total Power Dissipation @ T_C= 25^oC

Operating Junction Temperature

283

E_AR

dv/dt

P_TOT

T_J

9.4

V/ns

ºC

^oC

4.5

150

Storage Temperature Range

T_STG

-55 to +150

Note: Limited by maximum junction temperature

1/12

Version: B12

12 3 4 5 6 7...12

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