Datasheet > TSM2N60_1

TSM2N60_1

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
TSC		/
页数	文件大小	规格书
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描述
N-Channel Power Enhancement Mode MOSFET

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TSM2N60_1 数据手册

TSM2N60

N-Channel Power Enhancement Mode MOSFET

V_DS= 600V

Pin assignment:

1. Gate

I_D= 2A

2. Drain

R_{DS (on)}, Vgs @ 10V, Ids @ 1.0A =4.4Ω

3. Source

General Description

The TSM2N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without

degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche

and commutation modes. The new energy efficient design also offers a drain- to-source diode with a fast recovery time.

Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls,

these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are

critical and offer additional and safety margin against unexpected voltage transients.

Features

Robust high voltage termination

Source to Drain diode recovery time comparable to a

discrete fast recovery diode.

Avalanche energy specified

Diode is characterized for use in bridge circuits

I_DSSand V_DS(on)specified at elevated temperature

Block Diagram

Ordering Information

Part No.

TSM2N60CP

TSM2N60CH

Packing

Package

TO-252

Tape & Reel

Tube

TO-251

Absolute Maximum Rating (Ta = 25 ^oC unless otherwise noted)

Parameter

Symbol

V_DS

V_GS

I_D

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

Maximum Power Dissipation

600V

± 30

I_DM

Ta = 25 ^oC

Ta > 25 ^oC

P_D

0.4

W/^oC

^oC

Operating Junction Temperature

T_J

T_J, T_STG

E_AS

+150

- 55 to +150

Operating Junction and Storage Temperature Range

Single Pulse Drain to Source Avalanche Energy

(V_DD= 100V, V_GS=10V, I_AS=2A, L=10mH, R_G=25Ω)

Thermal Performance

Parameter

Symbol

T_L

Limit

Unit

Lead Temperature (1/8” from case)

Junction to Ambient Thermal Resistance (PCB mounted)

Note: Surface mounted on FR4 board t<=10sec.

Rθja

62.5

^oC/W

TSM2N60

1-4

2003/12 rev. F

12 3 4

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