Datasheet > TSM2N60_11

TSM2N60_11

更新时间： 2022-09-17 14:53:52

品牌	Logo	应用领域
TSC		/
页数	文件大小	规格书
8页	332K
描述
600V N-Channel Power MOSFET

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TSM2N60_11 数据手册

TSM2N60

600V N-Channel Power MOSFET

TO-220

TO-251

(IPAK)

TO-252

(DPAK)

Pin Definition:

1. Gate

PRODUCT SUMMARY

2. Drain

3. Source

V_DS(V)

R_DS(on)(Ω)

I_D(A)

600

5 @ V_GS=10V

General Description

The TSM2N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without

degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in

avalanche and commutation modes. The new energy efficient design also offers a drain- to-source diode with a

fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters

and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and

commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage

transients.

Features

Block Diagram

●

Robust high voltage termination

Avalanche energy specified

Diode is characterized for use in bridge circuits

Source to Drain diode recovery time comparable to a

discrete fast recovery diode.

Ordering Information

Part No.

Package

Packing

2.5Kpcs/ 13” Reel

75pcs / Tube

TSM2N60CP RO

TSM2N60CH C5

TSM2N60CZ C0

TO-252

TO-251

TO-220

N-Channel MOSFET

50pcs / Tube

Absolute Maximum Rating (Ta = 25^oC unless otherwise noted)

Parameter

Drain-Source Voltage

Symbol

Limit

600

±30

Unit

V_DS

V_GS

I_D

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

I_DM

I_S

Continuous Source Current (Diode Conduction)^a,b

Single Pulse Drain to Source Avalanche Energy

(V_DD= 100V, V_GS=10V, I_AS=2A, L=10mH, R_G=25Ω)

EAS

TO-251 / TO-252

TO-220

Maximum Power Dissipation @ Tc = 25^oC

P_DTOT

Operating Junction Temperature

T_J

+150

^oC

Operating Junction and Storage Temperature Range

T_J, T_STG

-55 to +150

1/8

Version: E11

12 3 4 5 6 7 8

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