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TSL1401R

更新时间： 2024-02-02 19:27:48
品牌 Logo 应用领域
其他 - ETC 传感器
页数 文件大小 规格书
10页 120K
描述
128 】 1 LINEAR SENSOR ARRAY WITH HOLD

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TSL1401R 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：TransferredReach Compliance Code：unknown
风险等级：5.71阵列类型：LINEAR
主体宽度：6.35 mm主体长度或直径：10.92 mm
动态范围：72 dB水平像素：1
外壳：PLASTIC安装特点：THROUGH HOLE MOUNT
最大工作电流：4.5 mA最高工作温度：70 °C
最低工作温度：输出范围：1.60-2.40V
输出类型：ANALOG VOLTAGE封装形状/形式：RECTANGULAR
像素大小：55.5X63.5 µm电源：5 V
传感器/换能器类型：IMAGE SENSOR,CCD光谱响应 (nm)：300-1100
子类别：CCD Image Sensors最大供电电压：5.5 V
最小供电电压：3 V表面贴装：NO
端接类型：SOLDER垂直像素：128
Base Number Matches：1

TSL1401R 数据手册

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TSL1401R  
128 × 1 LINEAR SENSOR ARRAY WITH HOLD  
TAOS035B – AUGUST 2002  
Electrical Characteristics at fclock = 1 MHz, VDD = 5 V, TA = 25°C, λp = 640 nm, tint = 5 ms,  
RL = 330 Ω, Ee = 11 µW/cm2 (unless otherwise noted) (see Note 2)  
PARAMETER  
TEST CONDITIONS  
MIN  
1.6  
0
TYP  
2
MAX  
2.4  
UNIT  
V
V
out  
Analog output voltage (white, average over 128 pixels) See Note 3  
V
Analog output voltage (dark, average over 128 pixels)  
E = 0  
0.1  
0.2  
V
drk  
e
PRNU Pixel response nonuniformity  
Nonlinearity of analog output voltage  
Output noise voltage  
See Note 4  
See Note 5  
See Note 6  
±4%  
±0.4%  
1
±7.5%  
FS  
mVrms  
V/  
R
e
Responsivity  
See Note 7  
25  
35  
45  
2
(µJ/cm )  
V
V
V
V
= 5 V, R = 330 Ω  
4.5  
2.5  
4.8  
2.8  
DD  
DD  
DD  
DD  
L
V
Analog output saturation voltage  
Saturation exposure  
V
sat  
= 3 V, R = 330 Ω  
L
= 5 V, See Note 8  
= 3 V, See Note 8  
136  
78  
2
SE  
nJ/cm  
DSNU Dark signal nonuniformity  
All pixels, E = 0, See Note 9  
0.02  
0.5%  
2.8  
0.05  
V
e
IL  
Image lag  
See Note 10  
V
V
= 5 V, E = 0  
4.5  
4.5  
1
DD  
DD  
e
I
Supply current  
mA  
DD  
= 3 V, E = 0  
2.6  
e
I
I
High-level input current  
Low-level input current  
Input capacitance  
V = V  
I DD  
µA  
µA  
pF  
IH  
IL  
V = 0  
I
1
C
5
i
NOTES: 2. All measurements made with a 0.1 µF capacitor connected between V and ground.  
DD  
3. The array is uniformly illuminated with a diffused LED source having a peak wavelength of 640 nm.  
4. PRNU is the maximum difference between the voltage from any single pixel and the average output voltage from all pixels of the  
device under test when the array is uniformly illuminated at the white irradiance level. PRNU includes DSNU.  
5. Nonlinearity is defined as the maximum deviation from a best-fit straight line over the dark-to-white irradiance levels, as a percent  
of analog output voltage (white).  
6. RMS noise is the standard deviation of a single-pixel output under constant illumination as observed over a 5-second period.  
7.  
R
= [V  
– V  
] ÷ (E × t )  
e(min)  
out(min)  
drk(max) e  
8. SE(min) = [V  
– V  
] × E × itnt ) ÷ [V  
– V  
]
sat(min)  
drk(min)  
e
int  
out(max)  
drk(min)  
9. DSNU is the difference between the maximum and minimum output voltage for all pixels in the absence of illumination.  
10. Image lag is a residual signal left in a pixel from a previous exposure. It is defined as a percent of white-level signal remaining after  
a pixel is exposed to a white condition followed by a dark condition:  
V
* V  
out (IL)  
drk  
IL +  
  100  
V
* V  
out (white)  
drk  
Timing Requirements (see Figure 1 and Figure 2)  
MIN  
20  
0
NOM  
MAX  
UNIT  
ns  
t
t
t
Setup time, serial input (see Note 11)  
Hold time, serial input (see Note 11 and Note 12)  
Pulse duration, clock high or low  
su(SI)  
h(SI)  
w
ns  
50  
0
ns  
t , t  
Input transition (rise and fall) time  
500  
ns  
r
f
NOTES: 11. Input pulses have the following characteristics: t = 6 ns, t = 6 ns.  
r
f
12. SI must go low before the rising edge of the next clock pulse.  
Dynamic Characteristics over recommended ranges of supply voltage and operating free-air  
temperature (see Figures 7 and 8)  
PARAMETER  
TEST CONDITIONS  
R = 330 Ω, C = 10 pF  
MIN  
TYP  
MAX  
UNIT  
t
Analog output settling time to ±1%  
120  
ns  
s
L
L
Copyright E 2002, TAOS Inc.  
The LUMENOLOGYr Company  
t
t
4
www.taosinc.com  
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