TSHF4410

更新时间： 2024-02-20 13:07:21

品牌	Logo	应用领域
威世 - VISHAY		红外LED 光电二极管
页数	文件大小	规格书
5页	97K
描述
High Speed Infrared Emitting Diode, RoHS Compliant, 890 nm, GaAlAs Double Hetero

阅读下载

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

TSHF4410 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Obsolete	Reach Compliance Code：	unknown
HTS代码：	8541.40.20.00	风险等级：	5.83
其他特性：	HIGH RELIABILITY	配置：	SINGLE
最大正向电流：	0.1 A	功能数量：	1
最高工作温度：	85 °C	最低工作温度：	-40 °C
光电设备类型：	INFRARED LED	标称输出功率：	40 mW
峰值波长：	890 nm	形状：	ROUND
尺寸：	2.9 mm	Base Number Matches：	1

TSHF4410 数据手册

TSHF4410

Vishay Semiconductors

High Speed Infrared Emitting Diode, RoHS Compliant, 890 nm,

GaAlAs Double Hetero

FEATURES

• Package type: leaded

• Package form: T-1

• Dimensions (in mm): ∅ 3

• Peak wavelength: λ_p= 890 nm

• High reliability

• High radiant power

• High radiant intensity

94 8636

• Angle of half intensity: ϕ = 22ꢀ

• Low forward voltage

• Suitable for high pulse current operation

• High modulation bandwidth: f_c= 12 MHz

• Good spectral matching with Si photodetectors

DESCRIPTION

TSHF4410 is an infrared, 890 nm emitting diode in GaAlAs

double hetero (DH) technology with high radiant power and

• Lead (Pb)-free component in accordance with

RoHS 2002/95/EC and WEEE 2002/96/EC

high speed, molded in a clear, untinted plastic package.

APPLICATIONS

• Infrared high speed remote control and free air data

transmission systems with high modulation frequencies or

high data transmission rate requirements

• Transmission systems according to IrDA requirements and

for carrier frequency based systems (e.g. ASK/FSK -

coded, 450 kHz or 1.3 MHz)

• Smoke-automatic fire detectors

PRODUCT SUMMARY

COMPONENT

I_e(mW/sr)

ϕ (deg)

_P(nm)

t_r(ns)

TSHF4410

890

Note

Test conditions see table “Basic Characteristics”

ORDERING INFORMATION

ORDERING CODE

PACKAGING

Bulk

REMARKS

PACKAGE FORM

TSHF4410

MOQ: 5000 pcs, 5000 pcs/bulk

T-1

Note

MOQ: minimum order quantity

ABSOLUTE MAXIMUM RATINGS

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

Reverse voltage

V_R

I_F

Forward current

100

200

1.5

Peak forward current

Surge forward current

Power dissipation

Junction temperature

t_p/T = 0.5, t_p= 100 µs

t_p= 100 µs

I_FM

I_FSM

P_V

T_j

180

100

ꢀC

Document Number: 81276

Rev. 1.1, 16-Sep-08

For technical questions, contact: emittertechsupport@vishay.com

www.vishay.com

171

12 3 4 5

下载PDF

与TSHF4410相关器件

型号	品牌	描述	获取价格	数据表
TSHF5200	VISHAY	High Speed IR Emitting Diode in ?5 mm (T-13/4) Package	获取价格
TSHF5200AS12	TEMIC	Infrared LED, 5mm, 1-Element, 870nm,	获取价格
TSHF5200AS12Z	TEMIC	Infrared LED, 5mm, 1-Element, 870nm	获取价格
TSHF5200AS21	TEMIC	Infrared LED, 5mm, 1-Element, 870nm	获取价格
TSHF5200BT12	TEMIC	Infrared LED, 5mm, 1-Element, 870nm,	获取价格
TSHF5200BT12Z	TEMIC	Infrared LED, 5mm, 1-Element, 870nm	获取价格