TSHF5211
Vishay Semiconductors
www.vishay.com
High Speed Infrared Emitting Diode, 890 nm,
Surface Emitter Technology
FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): Ø 5
• Leads with stand-off
• Peak wavelength: λp = 890 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: ϕ = 10°
94 8390
• Low forward voltage
• Good spectral matching to Si photodetectors
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
TSHF5211 is an infrared, 890 nm emitting diode in surface
emitter chip technology with high radiant power and high
speed, molded in a clear, untinted plastic package.
APPLICATIONS
• Industrial sensors
PRODUCT SUMMARY
COMPONENT
Ie (mW/sr)
ϕ (°)
λp (nm)
tr (ns)
TSHF5211
235
10
890
15
Note
•
Test conditions see table “Basic Characteristics“
ORDERING INFORMATION
ORDERING CODE
TSHF5211
PACKAGING
Bulk
REMARKS
PACKAGE FORM
MOQ: 4000 pcs, 1000 pcs/reel
MOQ: 5000 pcs, 1000 pcs/reel
MOQ: 5000 pcs, 1000 pcs/reel
T-1¾
T-1¾
T-1¾
TSHF5211-MS21
Tape and reel
Ammopack
TSHF5211-MSZ
Note
MOQ: minimum order quantity
•
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
100
UNIT
mA
mA
A
Forward current
IF
Peak forward current
Surge forward current
Power dissipation
tp/T = 0.5, tp = 100 μs
tp = 100 μs
IFM
200
IFSM
PV
1.0
170
mW
°C
Junction temperature
Ambient temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction to ambient (1)
Tj
100
Tamb
Tstg
Tsd
-40 to +85
-40 to +100
260
°C
°C
t ≤ 5 s, 2 mm from case
°C
EIA / JESD51
RthJA
230
K/W
Note
(1)
The emitted optical signal was not considered
Rev. 1.0, 09-May-2022
Document Number: 80343
1
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000