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TSHF5200

更新时间: 2024-02-27 18:24:00
品牌 Logo 应用领域
威世 - VISHAY 半导体红外LED光电二极管
页数 文件大小 规格书
6页 87K
描述
High Speed IR Emitting Diode in ?5 mm (T-13/4) Package

TSHF5200 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:unknown风险等级:5.59
Is Samacsys:N最大正向电流:0.1 A
最大正向电压:1.6 VJESD-609代码:e2
安装特点:THROUGH HOLE MOUNT最高工作温度:100 °C
最低工作温度:-40 °C峰值波长:870 nm
最大反向电压:5 V半导体材料:GaAlAs
光谱带宽:4e-8 m子类别:Infrared LEDs
表面贴装:NO端子面层:Tin/Silver (Sn/Ag)
视角:20 degBase Number Matches:1

TSHF5200 数据手册

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TSHF5200  
Vishay Telefunken  
High Speed IR Emitting Diode in ø 5 mm (T–1 ) Package  
Description  
94 8390  
TSHF5200 is a high speed infrared light emitting diode  
in GaAlAs on GaAlAs double hetero (DH) technology,  
molded on copper frame, in a clear, untinted plastic  
package.  
The new technology combines the high speed of DH–  
GaAlAs with the efficiency of standard GaAlAs and the  
low forward voltage of the standard GaAs technology.  
The TSHF5200 emitter is suitable for serial infrared  
links according to the IrDA–standard.  
Features  
High modulation bandwidth (10 MHz)  
High radiant power  
Low forward voltage  
Suitable for high pulse current operation  
Standard T–1 (ø 5 mm) package  
Angle of half intensity ϕ = ± 10  
Peak wavelength = 870 nm  
p
High reliability  
Good spectral matching to Si photodetectors  
Applications  
Infrared high speed remote control and free air data transmission systems with high modulation frequencies or  
high data transmission rate requirements.  
TSHF5200 is ideal for the design of transmission systems according to IrDA requirements and for carrier fre-  
quency based systems (e.g. ASK / FSK – coded, 450 kHz or 1.3 MHz).  
Absolute Maximum Ratings  
T
amb  
= 25 C  
Parameter  
Reverse Voltage  
Test Conditions  
Symbol  
Value  
5
Unit  
V
V
R
Forward Current  
I
100  
200  
1.5  
160  
mA  
mA  
A
mW  
C
C
C
C
K/W  
F
Peak Forward Current  
Surge Forward Current  
Power Dissipation  
Junction Temperature  
Operating Temperature Range  
Storage Temperature Range  
Soldering Temperature  
Thermal Resistance Junction/Ambient  
t /T = 0.5, t = 100 s  
t = 100 s  
p
I
FM  
p
p
I
FSM  
P
T
V
100  
j
T
–40...+100  
–40...+100  
260  
amb  
T
stg  
t
5sec, 2 mm from case  
T
sd  
R
270  
thJA  
Document Number 81023  
Rev. 3, 02-Aug-99  
www.vishay.de FaxBack +1-408-970-5600  
1 (6)  

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