Datasheet > TSF30H150C

TSF30H150C

更新时间： 2024-09-25 01:13:23

品牌	Logo	应用领域
TSC		/
页数	文件大小	规格书
5页	241K
描述
Trench Schottky Rectifier

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中文翻译

获取价格

数据手册

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TSF30H150C 数据手册

creat by AR

TSF30H100C thru TSF30H200C

Taiwan Semiconductor

Trench Schottky Rectifier

FEATURES

- Patented Trench Schottky technology

- Excellent high temperature stability

- Low forward voltage

- Low power loss/ High efficiency

- High forward surge capability

- Compliant to RoHS directive 2011/65/EU and

in accordance to WEEE 2002/96/EC

- Halogen-free according to IEC 61249-2-21 definition

ITO-220AB

TYPICAL APPLICATIONS

Trench Schottky barrier rectifier are designed for high frequency

miniature switched mode power supplies such as adapters, lighting

and on-board DC/DC converters.

MECHANICAL DATA

Case: ITO-220AB

Molding compound meets UL 94 V-0 flammability rating

Packing code with suffix "G" means green compound (halogen-free)

Terminal: Matte tin plated leads, solderable per JESD22-B102

Meet JESD 201 class 2 whisker test

Polarity: As marked

Mounting torque: 0.56 Nm max.

Weight: 1.7 g (approximately)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise noted)

TSF30H

100C

100

TSF30H

120C

120

TSF30H

150C

150

TSF30H

200C

200

PARAMETER

SYMBOL

V_RRM

UNIT

Maximum repetitive peak reverse voltage

per device

per diode

Maximum average forward rectified

current

I_F(AV)

Peak forward surge current, 8.3 ms single half sine-wave

superimposed on rated load per diode

I_FSM

150

Voltage rate of change (Rated V_R)

10000

1500

dV/dt

V_AC

V/μs

Isolation voltage from terminal to heatsink t = 1 min

Typ Max Typ Max Typ Max Typ Max

T_J= 25°C

0.76 0.82 0.80 0.88 0.81 0.90 0.84 0.92

I_F= 15A

I_F= 30A

T_J= 125°C

T_J= 25°C

T_J= 125°C

T_J= 25°C

T_J= 125°C

0.64 0.69 0.65 0.73 0.68 0.77 0.70 0.79

Instantaneous forward voltage

per diode ( Note1 )

V_F

0.86 0.92 0.90 0.96 0.89 0.98 0.91 1.00

0.75 0.80 0.78 0.86 0.77 0.86 0.80 0.89

150

μA

°C/W

°C

Instantaneous reverse current per diode at rated

reverse voltage

I_R

Typical thermal resistance

R_θJC

T_J

4.5

Operating junction temperature range

Storage temperature range

- 55 to +150

T_STG

°C

Note 1: Pulse test with pulse width=300μs, 1% duty cycle

Document Number: DS_D1411039

Version: G14

12 3 4 5

中文翻译

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