TSC2059
General Purpose NPN Transistor
BVCEO = 40V
Pin assignment:
1. Base
2. Emitter
Ic = 50mA
VCE (SAT), = 0.2V(typ.) @Ic / Ib = 500mA / 50mA
3. Collector
Features
Ordering Information
ꢀ
ꢀ
ꢀ
ꢀ
High transition frequency
Part No.
Packing
Package Marking
Very low capacitance
Small rbb’-Cc and high gain
Small NF.
TSC2059CX
3kpcs / Reel SOT-23
3E
Absolute Maximum Rating (Ta = 25 oC unless otherwise noted)
Parameter
Symbol
VCBO
VCEO
VEBO
IC
Limit
18V
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
25V
V
Emitter-Base Voltage
3
V
Collector Current
50
mA
mW
oC
oC
Collector Power Dissipation
Operating Junction Temperature
Operating Junction and Storage Temperature Range
PD
225
TJ
+150
- 55 to +150
TSTG
Electrical Characteristics
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Collector-Base Voltage
IC = 10uA, IE = 0
BVCBO
BVCEO
BVEBO
ICBO
25
18
3
--
--
--
--
V
V
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
IC = 1mA, IB = 0
IE = 10uA, IC = 0
--
--
V
VCB = 10V, IE = 0
VEB = 2V, IC = 0
--
--
0.5
0.5
0.5
270
--
uA
uA
V
Emitter Cutoff Current
IEBO
--
--
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Transition Frequency
IC / IB = 20mA / 4mA
VCE = 10V, IC = 10mA
VCE = 10V, IC= 10mA,
f=200MHz
VCE(SAT)1
hFE
--
--
52
--
--
fT
1000
MHz
Output Capacitance
VCB = 10V, f=1MHz
VCB = 10V, IC= 10mA,
f=31.8MHz
Cob
--
--
1.4
8
2.0
15
pF
pF
Rbb’-Cc
VCE = 12V, IC= 2mA,
f=200MHz, Rg=50ohm
NF
--
5.5
--
dB
Note : pulse test: pulse width <=380uS, duty cycle <=2%
Classification Of hFE
Rank
K
P
Q
Range
52 - 120
82 - 180
120 - 270
TSC2059
1-1
2004/06 rev. A