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TSC128DCZ PDF预览

TSC128DCZ

更新时间: 2024-11-18 03:57:51
品牌 Logo 应用领域
TSC 晶体开关晶体管高压
页数 文件大小 规格书
5页 324K
描述
High Voltage Fast-Switching NPN Power Transistor

TSC128DCZ 数据手册

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TSC128D  
High Voltage Fast-Switching NPN Power Transistor  
TO-220  
Pin Definition:  
1. Base  
PRODUCT SUMMARY  
2. Collector  
3. Emitter  
BVCEO  
BVCBO  
IC  
400V  
700V  
4A  
VCE(SAT)  
1.5V @ IC / IB = 2.5A / 0.5A  
Features  
Block Diagram  
High Voltage  
High Speed Switching  
Structure  
Silicon Triple Diffused Type  
NPN Silicon Transistor  
Integrated Antiparallel Collector-Emitter Diode  
Ordering Information  
Part No.  
Package  
TO-220  
Packing  
TSC128DCZ C0  
50pcs / Tube  
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)  
Parameter  
Symbol  
Limit  
Unit  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
VCBO  
VCEO  
VEBO  
IC  
700V  
V
V
400V  
9
V
Collector Current  
4
A
Collector Peak Current (tp <5ms)  
Base Current  
ICM  
8
A
IB  
2
A
Base Peak Current (tp <5ms)  
Total Dissipation  
IBM  
4
70  
A
Ptot  
TJ  
W
oC  
oC  
Maximum Operating Junction Temperature  
Storage Temperature Range  
+150  
TSTG  
-65 to +150  
Thermal Performance  
Parameter  
Symbol  
RӨJC  
Limit  
1.78  
Unit  
oC/W  
oC/W  
Junction to Case Thermal Resistance  
Junction to Ambient Thermal Resistance  
RӨJA  
62.5  
1/5  
Version: A07  

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