Datasheet > TS8314

TS8314

更新时间： 2024-11-20 03:57:55

品牌	Logo	应用领域
TSC		/
页数	文件大小	规格书
28页	1849K
描述
Bi-directional N-Channel 2.5V Specified MicroSURF⑩

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中文翻译

获取价格

技术参数
数据手册

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TS8314 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.61	湿度敏感等级：	1
Base Number Matches：	1

TS8314 数据手册

PRELIMINARY DATA SHEET

For information only

Battery Protection MicroSURF™

TS8314 – Bi-directional N-Channel 2.5V Specified MicroSURF™

General Description

Taiwan Semiconductor’s new low cost,

130 O

state of the art MicroSURF™ lateral

MOSFET process technology in chipscale

130 O

bondwireless packaging minimizes PCB

space and RDS(ON) plus provides an ultra-

low Qg X RDS(ON) figure of merit.

Features

MicroSURF™ for Battery Protection

Patent Pending

• 6.5A, 20V RDS1(ON) equivalent = 15mΩ at 4.5 Volts

• 5.5A, 20V RDS1(ON) equivalent = 22mΩ at 2.5 Volts

• Low profile package: less than 0.8mm height

when mounted on PCB.

• Occupies less than 1/5 the area of TSSOP-8.

• Excellent thermal characteristics.

• Integrated gate diodes provide ElectroStatic

Discharge (ESD) protection of 4000V Human

Body Model (HBM).

• Lead free solder bumps available.

Bottom: Bump Side

Ratings

Absolute Maximum Ratings

TA=25°C unless otherwise noted

Symbol Parameter

Units

VS1S2

VGS

Source1-Source2 Voltage

+12 / -0.5

6.5

Gate-Source Voltage

IS1S2

Source1-Source2 Current – Continuous

– Pulsed

Power Dissipation (Steady State)

Operating and Storage Junction Temperature Range

1.3

TJ, TSTG

-55 to +150

ºC

Thermal Characteristics

RθJA

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Balls

°C/W

R^θJR

8/15/03 Rev3

12 3 4 5 6 7...28

中文翻译

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