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TS260S_R2_00001 PDF预览

TS260S_R2_00001

更新时间: 2024-11-26 12:21:39
品牌 Logo 应用领域
强茂 - PANJIT /
页数 文件大小 规格书
5页 220K
描述
MICRO SURFACE MOUNT SCHOTTKY BRIDGE

TS260S_R2_00001 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:R-PDSO-G4Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.59其他特性:LOW POWER LOSS
最小击穿电压:60 V配置:BRIDGE, 4 ELEMENTS
二极管元件材料:SILICON二极管类型:BRIDGE RECTIFIER DIODE
最大正向电压 (VF):0.7 VJESD-30 代码:R-PDSO-G4
最大非重复峰值正向电流:50 A元件数量:4
相数:1端子数量:4
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:2 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED最大重复峰值反向电压:60 V
子类别:Bridge Rectifier Diodes表面贴装:YES
技术:SCHOTTKY端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

TS260S_R2_00001 数据手册

 浏览型号TS260S_R2_00001的Datasheet PDF文件第2页浏览型号TS260S_R2_00001的Datasheet PDF文件第3页浏览型号TS260S_R2_00001的Datasheet PDF文件第4页浏览型号TS260S_R2_00001的Datasheet PDF文件第5页 
TS260S  
MICRO SURFACE MOUNT SCHOTTKY BRIDGE  
VOLTAGE  
2 Amperes  
CURRENT  
60Volts  
FEATURES  
• Plastic package has Underwriters Laboratory  
Flammability Classification 94V-O.  
0.028(0.7)  
0.023(0.6)  
Flame Retardant Epoxy Molding Compound.  
• Exceeds environmental standards of MIL-S-19500/228  
0.006(0.15)  
0.002(0.05)  
Low power loss, high efficiency.  
Low forwrd voltge, high current capability  
+
-
• High surge capacity.  
• Super fast recovery times, high voltage.  
• Epitaxial chip construction.  
0.162(4.10)  
0.153(3.90)  
0.012(0.30)  
0.007(0.20)  
• Lead free in comply with EU RoHS 2002/95/EC directives.  
• Green molding compound as per IEC61249 Std. . (Halogen Free)  
0.203(5.15)  
0.190(4.85)  
MECHANICALDATA  
• Case: Micro Dip Molded plastic  
• Terminals: Lead solderable per MIL-STD-750, Method 2026  
• Polarity: As marked.  
• Standard packaging: Any  
• Weight: 0.090 grams.  
ABSOLUTE MAXIMUM RATINGS (TA=25oC unless otherwise noted)  
PARAMETER  
SYMBOL  
TS260S  
UNITS  
Maximum Recurrent P eak Reverse Voltage  
VRRM  
60  
V
Maximum RMS Voltage  
VRMS  
42  
60  
2
V
V
Maximum DC Blocking Voltage  
Maximum Average Forward Current  
V R  
IO  
A
Peak Forward Surge Current:8.3ms si ngle half sine-wave  
superimposed on rated load(JEDEC method)  
IFSM  
50  
A
Typical Thermal Resistance, Junction to Ambient (Note 2)  
Junction to Case (Note 1)  
RJA  
RJL  
210  
33  
OC/W  
OC  
Operating Junction Temperature and Storage Temperature Range  
TJ,TSTG  
-55 to +150  
NOTES:  
1.semi-infinite heatsink.  
2.Minimum pad for each lead on board  
PAGE . 1  
May 24,2012-REV.00  

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