Datasheet > TS1GHR72V4B

TS1GHR72V4B

更新时间： 2024-11-25 02:49:43

品牌	Logo	应用领域
创见 - TRANSCEND		动态存储器
页数	文件大小	规格书
8页	406K
描述
DRAM Modules

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中文翻译

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数据手册

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TS1GHR72V4B 数据手册

www.transcend-info.com

Embedded Solutions

DRAM Mpdules

DDR4

Transcend's DDR4 DRAM mpdules pꢁerate at a npminal vpltage pf just 1.2V, pꢃering higher energy eꢂciency and

exceꢁtipnal clpck sꢁeeds tp cater tp the demands pf the embedded industry. The mpdules are available in multiꢁle

fprm factprs and technplpgies, such as ECC and wide-temꢁerature suꢁꢁprt. All cpmꢁpnents are pf the highest

quality, having been spurced directly frpm the wprld's ꢄrst-tier suꢁꢁlier pf DRAM chiꢁs and stringently tested fpr

unꢁaralleled cpmꢁatibility, reliability, and ꢁerfprmance.

Features

Advanced Technplpgies

•

JEDEC standard 1.2V ꢀ.ꢀ0V ꢁpwer suꢁꢁly

SO₂

High energy eꢂciency

Cprner Bpnd &

Underꢄll

Anti-Sulfur

Technplpgy

Cpnfprmal

Cpating

8 bit ꢁre-fetch

Burst Length: 4, 8

10 Banks (4 Bank Grpuꢁs)

30μ”

Suꢁꢁprt DBI mpde

Suꢁꢁprt Cpmmand/Address ꢁarity detectipn

Suꢁꢁprt Data Cyclic Redundancy Check (CRC) fpr imꢁrpved data

reliability

Wide

Temꢁerature

3ꢀ µ

Gpld Finger

•

On-die terminatipn with ODT ꢁin

Serial ꢁresence detect with EEPROM

1ꢀꢀ% tested fpr stability, cpmꢁatibility and ꢁerfprmance

12 3 4 5 6 7 8

中文翻译

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