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TRF1222IRTMR PDF预览

TRF1222IRTMR

更新时间: 2024-02-08 02:26:34
品牌 Logo 应用领域
德州仪器 - TI 射频和微波射频上变频器射频下变频器微波上变频器微波下变频器
页数 文件大小 规格书
12页 452K
描述
3.5-GHz Integrated Up-Converter

TRF1222IRTMR 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:5 X 5 MM, GREEN, LEADLESS, PLASTIC, MO-220, QFN, LCC-32
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.39.00.01Factory Lead Time:1 week
风险等级:5.8Is Samacsys:N
其他特性:TTL COMPATIBLE特性阻抗:50 Ω
构造:COMPONENT输入功率最小值(CW):10 dBm
JESD-609代码:e3LO 可调谐:NO
安装特点:SURFACE MOUNT端子数量:32
最高工作温度:85 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装等效代码:LCC32,.2SQ,20
电源:5 VRF输出最大频率:3800 MHz
RF输出频率-最小值:3300 MHz射频/微波设备类型:UP CONVERTER
子类别:RF/Microwave Up/Down Converters最大压摆率:200 mA
表面贴装:YES端子面层:Matte Tin (Sn)
上转换增益-最小值:22 dBBase Number Matches:1

TRF1222IRTMR 数据手册

 浏览型号TRF1222IRTMR的Datasheet PDF文件第1页浏览型号TRF1222IRTMR的Datasheet PDF文件第2页浏览型号TRF1222IRTMR的Datasheet PDF文件第4页浏览型号TRF1222IRTMR的Datasheet PDF文件第5页浏览型号TRF1222IRTMR的Datasheet PDF文件第6页浏览型号TRF1222IRTMR的Datasheet PDF文件第7页 
TRF1222  
www.ti.com  
SLWS171AAPRIL 2005REVISED DECEMBER 2005  
TERMINAL FUNCTIONS (continued)  
TERMINAL  
I/O  
TYPE  
DESCRIPTION  
NO.  
NAME  
20  
22  
23  
24  
IFI N  
MXRO  
UCEN  
I
Analog  
Analog  
Digital  
Analog  
IF input, negative, dc-coupled typical dc voltage is 1.2 V  
Output of mixer (after balun) 50-impedance with high impedance dc ground.  
Set high to enable IF amplifier and RF amplifiers  
O
I
MXRADJ  
O
Normally grounded. Provide 0-jumper to ground.  
Not connected for normal operation. IF amplifier bias adjustment. Do not ground this  
pin or connect to any other pin.  
25  
IFADJ  
26  
27  
31  
VDDIF  
RFI  
I
I
I
Power  
Analog  
Power  
Positive supply for IF bias circuitry 5 V  
Input to RF amplifier, 50-impedance, internally ac-coupled  
RF amplifier bias 5 V  
VDD1  
Back of package has metal base that must be grounded for thermal and RF  
performance.  
Back  
GND  
ABSOLUTE MAXIMUM RATINGS  
over operating free-air temperature range (unless otherwise noted)  
VALUE  
0 to 5.5  
-5.5 to 0  
10  
UNIT  
V
VDD  
-VDD  
PIN  
Positive dc supply voltage  
Negative dc supply voltage  
RF input power  
V
dBm  
°C  
TJ  
Junction temperature  
200  
PD  
Power dissipation  
1
W
Digital input pins  
Thermal resistance junction-to-case(1)  
-0.3 to 5.5  
9.01  
V
θjc  
°C/W  
°C  
Tstg  
Top  
Storage temperature  
-40 to 105  
-40 to 85  
260  
Operating temperature  
Lead temperature (40 Sec Max)  
°C  
°C  
(1) Thermal resistance is junction to ambient assuming thermal pad with 16 thermal vias under package metal base. See the recommended  
PCB layout.  
ELECTRICAL CHARACTERISTICS  
PARAMETER  
DC CHARACTERISTICS  
TEST CONDITIONS  
MIN  
4.75  
TYP  
MAX  
UNIT  
VDD  
IDD  
Positive supply voltage  
Positive supply current (total)  
Negative supply voltage  
Negative supply current  
Supply current RF 2, pin 2  
Supply current, LO, pin 14  
Supply current, IF  
5
175  
-5  
5.25  
200  
-4.75  
6
V
mA  
V
VNEG  
INEG  
IVDD2  
ILO  
-5.25  
3
mA  
mA  
mA  
mA  
mA  
V
50  
50  
47  
28  
5
IIF  
Pin 17, 18, and 26 combined  
IVDD1  
VIH  
Supply current RF1, pin 31  
Input high voltage  
2.5  
VIL  
Input low voltage  
0.8  
300  
–50  
V
IIH  
Input high current  
µA  
µA  
IIL  
Input low current  
3

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