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TR8

更新时间： 2024-02-16 22:12:27
品牌 Logo 应用领域
TRSYS 可控硅三端双向交流开关
页数 文件大小 规格书
5页 148K
描述
SILICON TRIACS

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中文翻译

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TR8 技术参数

是否Rohs认证： 符合生命周期：Active
Reach Compliance Code：compliantECCN代码：EAR99
风险等级：2.36其他特性：RATED BREAKING CAPACITY AT 160 VDC: 20000 A
熔断特性：TIME DELAY主体高度：51 mm
主体长度或直径：14 mm内置特性：INDICATOR
电路保护类型：ELECTRIC FUSE安装特点：INLINE/HOLDER
物理尺寸：14mm x 51mm额定分断能力：200000 A
额定电流：8 A额定电压（交流）：250 V
额定电压（直流）：160 V参考标准：CSA; UL
表面贴装：NO端子形状：END CAP

TR8 数据手册

 浏览型号TR8的Datasheet PDF文件第2页浏览型号TR8的Datasheet PDF文件第3页浏览型号TR8的Datasheet PDF文件第4页浏览型号TR8的Datasheet PDF文件第5页 
TR8 SERIES  
SILICON TRIACS  
l
l
l
l
8 A RMS, 70 A Peak  
TO-220 PACKAGE  
(TOP VIEW)  
Glass Passivated Wafer  
400 V to 800 V Off-State Voltage  
MT1  
MT2  
G
1
2
3
Max I of 50 mA (Quadrants 1 - 3)  
GT  
Pin 2 is in electrical contact with the mounting base.  
absolute maximum ratings over operating case temperature (unless otherwise noted)  
RATING  
SYMBOL  
VALUE  
UNIT  
TR8-400-70  
TR8-600-70  
TR8-700-70  
TR8-800-70  
400  
600  
Repetitive peak off-state voltage (see Note 1)  
VDRM  
V
700  
800  
Full-cycle RMS on-state current at (or below) 85°C case temperature (see Note 2)  
Peak on-state surge current full-sine-wave (see Note 3)  
Peak on-state surge current half-sine-wave (see Note 4)  
Peak gate current  
IT(RMS)  
ITSM  
ITSM  
IGM  
8
A
A
70  
80  
A
±1  
A
Peak gate power dissipation at (or below) 85°C case temperature (pulse width £ 200 m s)  
Average gate power dissipation at (or below) 85°C case temperature (see Note 5)  
Operating case temperature range  
PGM  
PG(AV)  
TC  
2.2  
W
W
°C  
°C  
°C  
0.9  
-40 to +110  
-40 to +125  
230  
Storage temperature range  
Tstg  
Lead temperature 1.6 mm from case for 10 seconds  
TL  
NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1.  
2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 85°C derate linearly to 110°C case temperature at  
the rate of 320 mA/°C.  
3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of on-state current.  
Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost.  
4. This value applies for one 50-Hz half-sine-wave when the device is operating at (or below) the rated value of on-state current.  
Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost.  
5. This value applies for a maximum averaging time of 20 ms.  
electrical characteristics at 25°C case temperature (unless otherwise noted)  
MIN  
TYP  
MAX  
PARAMETER  
TEST CONDITIONS  
UNIT  
Repetitive peak  
off-state current  
IDRM  
VD = rated VDRM  
supply = +12 V†  
IG = 0  
TC = 110°C  
±2  
mA  
V
RL = 10 W  
RL = 10 W  
RL = 10 W  
RL = 10 W  
RL = 10 W  
RL = 10 W  
RL = 10 W  
RL = 10 W  
tp(g) > 20 m s  
tp(g) > 20 m s  
tp(g) > 20 m s  
tp(g) > 20 m s  
tp(g) > 20 m s  
tp(g) > 20 m s  
tp(g) > 20 m s  
tp(g) > 20 m s  
2
50  
-50  
-50  
Peak gate trigger  
current  
Vsupply = +12 V†  
Vsupply = -12 V†  
Vsupply = -12 V†  
-12  
-9  
IGTM  
mA  
V
20  
Vsupply = +12 V†  
0.7  
-0.8  
-0.8  
0.9  
2
-2  
-2  
2
Peak gate trigger  
voltage  
Vsupply = +12 V†  
Vsupply = -12 V†  
Vsupply = -12 V†  
VGTM  
† All voltages are with respect to Main Terminal 1.  
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