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TR136D PDF预览

TR136D

更新时间: 2024-11-23 08:37:23
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体开关小信号双极晶体管高压局域网
页数 文件大小 规格书
9页 134K
描述
High voltage fast-switching NPN power transistor

TR136D 技术参数

生命周期:Obsolete零件包装代码:TO-220AB
包装说明:ROHS COMPLIANT PACKAGE-3针数:3
Reach Compliance Code:compliant风险等级:5.78
Is Samacsys:N最大集电极电流 (IC):3 A
集电极-发射极最大电压:400 V配置:SINGLE WITH BUILT-IN DIODE
最小直流电流增益 (hFE):10JEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:NPN
最大功率耗散 (Abs):60 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

TR136D 数据手册

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TR136D  
High voltage fast-switching NPN power transistor  
Preliminary Data  
Features  
High voltage capability  
Low spread of dynamic parameters  
Minimum lot-to-lot spread for reliable operation  
Very high switching speed  
Integrated antiparallel collector-emitter diode  
3
2
1
Applications  
TO-220  
Electronic ballast for fluorescent lighting  
Electronic transformer for halogen lamps  
Description  
Figure 1.  
Internaschematic diagram  
The device is manufactured using high voltage  
multi epitaxial planar technology for high switching  
speeds. It uses a cellular emitter structure with  
planar edge termination to enhance switching  
speeds while maintaining a satisfactory RBSOA.  
Table 1.  
Order code  
TR136D  
Device summary  
Marking  
Package  
TO-220  
Packaging  
TR136D  
Tube  
February 2008  
Rev 2  
1/9  
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to  
change without notice.  
www.st.com  
9

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