TVS DIODE ARRAY
TPSOT03BC-TPSOT24BC
Electrical Characteristics (@TA=25℃ unless otherwise specified)
TPSOT03BC TVS for 3V Lines
Parameter
Symbol Test conditions
Min.
Typ.
Max.
3
Units
V
Reverse Stand-off Voltage
Reverse breakdown voltage
Reverse leakage current
VRWM
VBR
-
-
-
-
-
-
4.5
6.5
1
V
IR
VR =3V
-
-
-
uA
IPP=1A, tp=8/20us
IPP=25A, tp=8/20us
7
Clamping voltage
VC
V
12
VR = 0V, f = 1MHz
Pin 1 to 3 or Pin 2 to 3
Junction capacitance
CJ
-
-
150
pF
TPSOT05BC TVS for 5V Lines
Parameter
Symbol Test conditions
Min.
Typ.
Max.
5
Units
V
Reverse Stand-off Voltage
Reverse breakdown voltage
Reverse leakage current
VRWM
-
6
-
-
-
-
-
-
VBR
IR
IR = 1mA
8
V
VR =5V
1
uA
IPP=5A, tp=8/20us
IPP=20A, tp=8/20us
-
9.8
15
Clamping voltage
VC
CJ
V
-
VR = 0V, f = 1MHz
Pin 1 to 3 or Pin 2 to 3
Junction capacitance
-
-
125
pF
TPSOT12BC TVS for 12V Lines
Parameter
Symbol Test conditions
Min.
Typ.
Max.
12
16
1
Units
V
Reverse Stand-off Voltage
Reverse breakdown voltage
Reverse leakage current
VRWM
-
-
-
-
-
-
VBR
IR
IR = 1mA
13.3
V
VR =12V
-
-
-
uA
IPP=5A, tp=8/20us
IPP=15A, tp=8/20us
19
25
Clamping voltage
VC
CJ
V
VR = 0V, f = 1MHz
Pin 1 to 3 or Pin 2 to 3
Junction capacitance
-
-
100
pF
TPSOT15BC TVS for 15V Lines
Parameter
Symbol Test conditions
Min.
Typ.
Max.
15
20
1
Units
V
Reverse Stand-off Voltage
Reverse breakdown voltage
Reverse leakage current
VRWM
-
-
-
-
-
-
VBR
IR
IR = 1mA
16.7
V
VR =15V
-
-
-
uA
IPP=5A, tp=8/20us
IPP=10A, tp=8/20us
27
40
Clamping voltage
VC
CJ
V
VR = 0V, f = 1MHz
Pin 1 to 3 or Pin 2 to 3
Junction capacitance
-
-
75
pF
TPSOT24BC TVS for 24V Lines
Parameter
Symbol Test conditions
Min.
Typ.
Max.
24
33
1
Units
V
Reverse Stand-off Voltage
Reverse breakdown voltage
Reverse leakage current
VRWM
-
-
-
-
-
-
VBR
IR
IR = 1mA
26.7
V
VR =24V
-
-
-
uA
IPP=5A, tp=8/20us
IPP=8A, tp=8/20us
40
50
Clamping voltage
VC
CJ
V
VR = 0V, f = 1MHz
Pin 1 to 3 or Pin 2 to 3
Junction capacitance
-
-
50
pF
TVM0075A: April 2019
www.gmesemi.com
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