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TPSMP6.8AHM3-85A PDF预览

TPSMP6.8AHM3-85A

更新时间: 2024-11-22 01:24:43
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
5页 89K
描述
High Power Density Surface Mount PAR Transient Voltage Suppressors

TPSMP6.8AHM3-85A 数据手册

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New Product  
TPSMP6.8 thru TPSMP43A  
Vishay General Semiconductor  
High Power Density Surface Mount PAR®  
Transient Voltage Suppressors  
FEATURES  
eSMP® Series  
• Junction  
passivation  
optimized  
design  
passivated anisotropic rectifier technology  
• TJ = 185 °C capability suitable for high reliability  
and automotive requirement  
• Very low profile - typical height of 1.0 mm  
• Ideal for automated placement  
• Uni-direction only  
• Excellent clamping capability  
• Low incremental surge resistance  
• Very fast response time  
DO-220AA (SMP)  
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
260 °C  
PRIMARY CHARACTERISTICS  
VBR  
6.8 V to 43 V  
• AEC-Q101 qualified  
PPPM (for VBR 6.8 V)  
250 W  
300 W  
400 W  
2.5 W  
40 A  
• Compliant to RoHS Directive 2002/95/EC and in  
accordance to WEEE 2002/96/EC  
PPPM (for VBR 7.5 V to 12 V)  
Halogen-free according to IEC 61249-2-21 definition  
PPPM (for VBR 13 V to 43 V)  
PD  
IFSM  
MECHANICAL DATA  
Case: DO-220AA (SMP)  
TJ max.  
185 °C  
Molding compound meets UL 94 V-0 flammability rating  
Base P/NHM3 - halogen-free, RoHS compliant, and  
automotive grade  
TYPICAL APPLICATIONS  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
HM3 suffix meets JESD 201 class 2 whisker test  
Protection for ICs, drive transistors, signal lines of sensor  
units, and electronic units in consumer, computer, industrial  
and automotive applications.  
Polarity: Color band denotes cathode end  
MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
PPPM  
IPPM  
VALUE  
See table next page  
See table next page  
2.5  
UNIT  
W
Peak power dissipation with a 10/1000 μs waveform (fig. 1 and 3) (1)(2)  
Peak power pulse current with a 10/1000 μs waveform (fig. 1) (1)  
Power dissipation on infinite heatsink, TA = 75 °C  
A
PD  
W
Peak forward surge current 10 ms single half sine-wave  
superimposed on rated load  
IFSM  
40  
A
Maximum instantaneous forward voltage at 25 A (3)  
Operating junction and storage temperature range  
VF  
2.5  
V
TJ, TSTG  
- 65 to + 185  
°C  
Notes  
(1)  
Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2  
Mounted on PCB with 5.0 mm x 5.0 mm copper pads attached to each terminal  
Pulse test: 300 μs pulse width, 1 % duty cycle  
(2)  
(3)  
Document Number: 88471  
Revision: 19-Apr-11  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
1
This document is subject to change without notice.  
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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