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TPSMC13-HE3/57T PDF预览

TPSMC13-HE3/57T

更新时间: 2024-11-24 13:27:43
品牌 Logo 应用领域
威世 - VISHAY 局域网光电二极管电视
页数 文件大小 规格书
5页 89K
描述
1500W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB, ROHS COMPLIANT, PLASTIC, SMC, 2 PIN

TPSMC13-HE3/57T 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Obsolete零件包装代码:DO-214AB
包装说明:ROHS COMPLIANT, PLASTIC, SMC, 2 PIN针数:2
Reach Compliance Code:compliant风险等级:5.74
Is Samacsys:N其他特性:EXCELLENT CLAMPING CAPABILITY
最大击穿电压:14.3 V最小击穿电压:11.7 V
配置:SINGLE二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJEDEC-95代码:DO-214AB
JESD-30 代码:R-PDSO-C2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值反向功率耗散:1500 W
元件数量:1端子数量:2
最高工作温度:185 °C最低工作温度:-65 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性:UNIDIRECTIONAL认证状态:Not Qualified
最大重复峰值反向电压:10.5 V表面贴装:YES
技术:AVALANCHE端子面层:MATTE TIN
端子形式:C BEND端子位置:DUAL
处于峰值回流温度下的最长时间:40Base Number Matches:1

TPSMC13-HE3/57T 数据手册

 浏览型号TPSMC13-HE3/57T的Datasheet PDF文件第2页浏览型号TPSMC13-HE3/57T的Datasheet PDF文件第3页浏览型号TPSMC13-HE3/57T的Datasheet PDF文件第4页浏览型号TPSMC13-HE3/57T的Datasheet PDF文件第5页 
TPSMC6.8 thru TPSMC47A  
Vishay General Semiconductor  
®
Surface Mount PAR Transient Voltage Suppressors  
High Temperature Stability and High Reliability Conditions  
FEATURES  
• Junction passivation optimized design  
passivated anisotropic rectifier technology  
• T = 185 °C capability suitable for high  
J
reliability and automotive requirement  
• Available in uni-directional polarity only  
• 1500 W peak pulse power capability with a  
10/1000 µs waveform  
DO-214AB (SMC)  
• Excellent clamping capability  
• Very fast response time  
• Low incremental surge resistance  
• Meets MSL level 1, per J-STD-020, LF maximum  
peak of 260 °C  
PRIMARY CHARACTERISTICS  
• AEC-Q101 qualified  
VBR  
PPPM  
IFSM  
6.8 V to 47 V  
1500 W  
200 A  
• Compliant to RoHS Directive 2002/95/EC and in  
accordance to WEEE 2002/96/EC  
TJ max.  
185 °C  
MECHANICAL DATA  
Case: DO-214AB (SMC)  
Molding compound meets UL 94 V-0 flammability  
rating  
TYPICAL APPLICATIONS  
Use in sensitive electronics protection against voltage  
transients induced by inductive load switching and  
lighting on ICs, MOSFET, signal lines of sensor units  
for consumer, computer, industrial, automotive and  
telecommunication.  
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
HE3 suffix meets JESD 201 class 2 whisker test  
Polarity: Color band denotes cathode end  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL  
PPPM  
IPPM  
VALUE  
1500  
UNIT  
W
Peak pulse power dissipation with a 10/1000 µs waveform (1)(2) (fig. 3)  
Peak power pulse current with a 10/1000 µs waveform (1) (fig. 1)  
Peak forward surge current 8.3 ms single half sine-wave (2)(3)  
Maximum instantaneous forward voltage at 100 A (2)(3)  
Operating junction and storage temperature range  
See next table  
200  
A
IFSM  
A
VF  
3.5  
V
TJ, TSTG  
- 65 to + 185  
°C  
Notes  
(1) Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2  
(2) Mounted on 0.31" x 0.31" (8.0 mm x 8.0 mm) copper pads at each terminal  
(3) Measured on 8.3 ms single half sine-wave, or equivalent square wave, duty cycle = 4 pulses per minute maximum  
Document Number: 88407  
Revision: 09-Feb-11  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
1

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