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TPSMB6.8A-HE3/5BT

更新时间： 2024-12-01 06:54:03
品牌 Logo 应用领域
威世 - VISHAY 电视
页数 文件大小 规格书
5页 78K
描述
DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2 PIN, Transient Suppressor

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TPSMB6.8A-HE3/5BT 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：DO-214AA
包装说明：ROHS COMPLIANT, PLASTIC, SMB, 2 PIN针数：2
Reach Compliance Code：unknown风险等级：5.82

TPSMB6.8A-HE3/5BT 数据手册

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TPSMB6.8 thru TPSMB43A  
Vishay General Semiconductor  
®
Surface Mount PAR Transient Voltage Suppressors  
High Temperature Stability and High Reliability Conditions  
FEATURES  
• Junction passivation optimized design  
passivated anisotropic rectifier technology  
• T = 185 °C capability suitable for high  
J
reliability and automotive requirement  
• Available in uni-directional polarity only  
• 600 W peak pulse power capability with a  
10/1000 µs waveform, repetitive rate (duty  
cycle): 0.01 %  
DO-214AA (SMB)  
• Excellent clamping capability  
• Very fast response time  
• Low incremental surge resistance  
• Meets MSL level 1, per J-STD-020, LF maximum  
peak of 260 °C  
PRIMARY CHARACTERISTICS  
VBR  
PPPM  
IFSM  
6.8 V to 43 V  
• AEC-Q101 qualified  
600 W  
75 A  
• Compliant to RoHS Directive 2002/95/EC and in  
accordance to WEEE 2002/96/EC  
TJ max.  
185 °C  
MECHANICAL DATA  
Case: DO-214AA (SMB)  
Molding compound meets UL 94 V-0 flammability  
rating  
TYPICAL APPLICATIONS  
Use in sensitive electronics protection against voltage  
transients induced by inductive load switching and  
lighting on ICs, MOSFET, signal lines of sensor units  
for consumer, computer, industrial, automotive and  
telecommunication.  
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
HE3 suffix meets JESD 201 class 2 whisker test  
Polarity: Color band denotes cathode end  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL  
PPPM  
IPPM  
VALUE  
600  
UNIT  
W
Peak pulse power dissipation with a 10/1000 µs waveform (1)(2) (fig. 1)  
Peak pulse current with a 10/1000 µs waveform (1) (fig. 3)  
Peak forward surge current 8.3 ms single half sine-wave (2)(3)  
Instantaneous forward voltage at 50 A (3)  
See next table  
75  
A
IFSM  
A
VF  
3.5  
V
Operating junction and storage temperature range  
TJ, TSTG  
- 65 to + 185  
°C  
Notes  
(1) Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2  
(2) Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) land areas per figure  
(3) Mounted on 8.3 ms single half sine-wave duty cycle = 4 pulses per minute maximum  
Document Number: 88406  
Revision: 09-Feb-11  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
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